Crystal growth and optical properties of Bi4Si3O12:Nd

Nachimuthu, Santhanamoorthi; Kidokoro, N.; Ootsuka, Keisuke; Ishii, Mitsuru; Kobayashi, Masaaki; Taira, Takunori; Sato, Y.; Kurimura, Sunao

doi:10.1016/s0022-0248(01)01118-6

Cited by 20 publications

(12 citation statements)

References 6 publications

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“…Taking into account the requirements for a magneto-optic material applied in the visible spectral region, the family of eulytite-type rare-earth phosphates M 3 R(PO 4 ) 3 (where M = alkaline-earth metal, and R = lanthanide), which demonstrate great potential for applications in laser host materials [19][20][21], and phosphors [22,23], have come to draw more and more attention from our research group. Ba 3 Tb(PO 4 ) 3 (BTP), a member of the eulytite phosphates, crystallize in the cubic system with space group I 43d (PDF 43-0640 isotropic medium, with strong crystallizability, low cost of materials, and no special absorption at the visible-near IR region.…”

Section: Introductionmentioning

confidence: 99%

Ba3Tb(PO4)3: Crystal growth, structure, magnetic and magneto-optical properties

et al. 2015

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Section: Introductionmentioning

confidence: 99%

Ba3Tb(PO4)3: Crystal growth, structure, magnetic and magneto-optical properties

et al. 2015

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“…The laser crystal is one Nd doped BSO single crystals with the Nd concentrations of 0.5, 1.5, 2.5, 5.0, 7.5 and 10.0 at% have been grown by vertical Bridgman method. 43 The distribution coefficient of Nd in BSO crystal is found to be 1.1. The crystal-field modeling and optical properties of Nd-doped BSO crystal have been investigated.…”

Section: Re-doped Bso Laser Crystalsmentioning

confidence: 94%

“…The crystal-field modeling and optical properties of Nd-doped BSO crystal have been investigated. [43][44][45] The Landé factors were determined to be g = 1 15 ± 0 01 and g ⊥ = 2 47 ± 0 02. The absorption coefficients at the peak wavelengths of 743 and 809 nm were 34 and 19 cm −1 , respectively, for 5.0 at% Nd doping.…”

Section: Re-doped Bso Laser Crystalsmentioning

confidence: 99%

Development of Doped Bi4Si3O12 Crystals for Scintillation, Laser and LED Applications

Jia-Yue¹,

Bobo²,

Zhang³

2015

mater focus

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Bismuth silicate Bi 4 Si 3 O 12 (BSO) crystal is a fast scintillator which has potential applications in high energy physics, nuclear physics, computed tomography and dosimetry. Compared with widely used Bi 4 Ge 3 O 12 (BGO) crystal, BSO has some better scintillation properties such as a faster decay time, greater radiation hardness and a lower raw material cost, so it is considered to be the substitute for an alternative to BGO crystals. However, two main problems hindered its practical applications: (1) it is difficult to grow large size and high quality crystals due to its compositional segregation; (2) BSO has a relatively low light yield. Recently, large size BSO crystals have been grown by the modified vertical Bridgman method in Shanghai Institute of Technology. The scintillation properties of rare earth doped BSO crystals have been investigated and BSO crystal doped with small amount Dy 2 O 3 increases its light yield remarkably. Furthermore, some experimental results revealed the potential applications of Re-doped BSO crystals in laser and LED fields. In this review, the growth process, scintillation properties and luminescent mechanism of Re or Ge doped BSO crystals were introduced. The spectroscopic properties and energy transfer of Re-doped BSO crystals were discussed based on its applications in laser and LED. As a result, doped BSO crystal is a novel multi-functional material for scintillation, laser and LED applications.

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“…Experiments were carried out on an n-type single crystal of Ce doped PbA (A = Te, Se, S) grown by the Bridgman method [18]. The crystals were not intentionally doped with any other element.…”

Section: Methodsmentioning

confidence: 99%

Magnetic properties of Ce³⁺in PbCeA (A= Te, Se, S)

Isber

Gratens

Charar

et al. 2013

EPJ Web of Conferences

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Abstract. The magnetic susceptibility of Pb 1-x Ce x A (A = S, Se and Te) crystals with 0.006 ≤ x ≤ 0.036 were studied in the temperature range from 20 mK up to room temperature. X-band (~9.5 GHz) Electron Paramagnetic Resonance (EPR) showed small shifts in the effective Landé factors that were attributed to crystal-field admixture. The EPR measurements were correlated with the magnetic susceptibility data and resulted in estimating the crystal-field splitting E( 8 ) -E( 7 ) of the lowest 2 F 5/2 manifold for Ce 3+ ions in PbA (A = S, Se and Te) of about 340 K, 440 K and 540 K for Pb 1-x Ce x Te, Pb 1-x Ce x Se, and Pb 1-x Ce x S, respectively. The values for the crystal-field splitting deduced from the magnetic data were found to be in agreement with the calculated ones based on the point charge model. Moreover, the deHaas van-Alphen magnetic oscillations in the susceptibility measurements of Pb 1-x Ce x Te (x~ 0.05 and 0.07) were observed at ultra-low temperature (20 mK); The oscillations were investigated and the values of the oscillatory period for Pb 1-x Ce x Te (x = 0.0048 and 0.007) are reported.

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Crystal growth and optical properties of Bi4Si3O12:Nd

Cited by 20 publications

References 6 publications

Ba3Tb(PO4)3: Crystal growth, structure, magnetic and magneto-optical properties

Ba3Tb(PO4)3: Crystal growth, structure, magnetic and magneto-optical properties

Development of Doped Bi<SUB>4</SUB>Si<SUB>3</SUB>O<SUB>12</SUB> Crystals for Scintillation, Laser and LED Applications

Magnetic properties of Ce³⁺in PbCeA (A= Te, Se, S)

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Crystal growth and optical properties of Bi4Si3O12:Nd

Cited by 20 publications

References 6 publications

Ba3Tb(PO4)3: Crystal growth, structure, magnetic and magneto-optical properties

Ba3Tb(PO4)3: Crystal growth, structure, magnetic and magneto-optical properties

Development of Doped Bi<SUB>4</SUB>Si<SUB>3</SUB>O<SUB>12</SUB> Crystals for Scintillation, Laser and LED Applications

Magnetic properties of Ce3+in PbCeA (A= Te, Se, S)

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Magnetic properties of Ce³⁺in PbCeA (A= Te, Se, S)