Crystal growth and scintillation properties of Tm3+ doped LaCl3 single crystal for radiation detection

Tariwong, Y.; Vuong, Phan Quoc; Luân, Nguyễn Thành; Saha, Sudipta; Kim, Hongjoo; Kothan, S.; Wantana, N.; Chanthima, N.; Kaewkhao, J.

doi:10.1016/j.radphyschem.2022.110347

Search citation statements

Order By: Relevance

Paper Sections

Select...

Results1

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2022

2024

Publication Types

Select...

Article4

Relationship

Self Cite0

Independent4

Authors

Journals

Cited by 4 publications

(1 citation statement)

References 30 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…They were attributed to the 4f-4f transition of Tm 3+ because similar peaks were observed for other Tm-doped materials. (33,44) The relative emission intensities of Tm 3+ at 480 and 650 nm increased as the Tm concentration increased. The emission at 1600 nm was considered to have originated from the 3 F 4 -3 H 6 transition.…”

Section: Resultsmentioning

confidence: 99%

Radiation-induced Luminescence Properties of Tm-doped Bi4Ge3O12 Single Crystals

Okazaki¹,

Nakauchi²,

Fukushima³

et al. 2023

Sensors and Materials

View full text Add to dashboard Cite

We grew 0.1, 0.5, and 1% Tm-doped Bi 4 Ge 3 O 12 single crystals by the floating zone method. Their photoluminescence and scintillation properties were investigated in the range from visible to near-IR. Luminescence spectra and decay times consistent with the transitions of Tm 3+ were confirmed. X-ray-irradiated dose rate response properties were evaluated using the prepared samples and an InGaAs photodiode. The 1% Tm-doped sample showed the widest dynamic range (0.03-60 Gy/h) among the prepared samples.

show abstract

Section: Resultsmentioning

confidence: 99%