Crystal growth and transport properties of Weyl semimetal TaAs

Peramaiyan, G.; Muthuselvam, I. Panneer; Xu, Su-Yang; Hasan, M. Zahid; Chou, F. C.

doi:10.1088/1361-648x/aa9a75

Cited by 17 publications

(11 citation statements)

References 37 publications

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“…The room temperature resistivities are equal to ρ || ∼ 20 μΩ·cm and ρ ⊥ ∼ 72 μΩ·cm, respectively. These values are in good agreement with the data for TaAs bulk samples obtained by the chemical vapor method …”

Section: Resultssupporting

confidence: 90%

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Structural Properties of TaAs Weyl Semimetal Thin Films Grown by Molecular Beam Epitaxy on GaAs(001) Substrates

Sadowski

Domagała

Zajkowska

et al. 2022

Crystal Growth & Design

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Thin crystalline layers of TaAs Weyl semimetal are grown by molecular beam epitaxy on GaAs(001) substrates. The (001) planes of the tetragonal TaAs lattice are parallel to the GaAs(001) substrate, but the corresponding in-plane crystallographic directions of the substrate and the layer are rotated by 45°. In spite of a substantial lattice mismatch (about 19%) between GaAs(001) substrate and TaAs epilayer no misfit dislocations are observed at the GaAs(001)/TaAs(001) interface. Only stacking fault defects in TaAs are detected with transmission electron microscopy. Thorough X-ray diffraction measurements and analysis of the in-situ reflection high energy electron diffraction images indicates that TaAs layers are fully relaxed already at the initial deposition stage. Atomic force microscopy imaging reveals the columnar structure of the layers, with lateral (parallel to the layer surface) columns about 20 nm wide and 200 nm long. Both X-ray diffraction and transmission electron microscopy measurements indicate that the columns share the same orientation and crystalline structure.

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Section: Resultssupporting

confidence: 90%

“…These values are in good agreement with the data for TaAs bulk samples obtained by the chemical vapor method. 27…”

Section: ■ Introductionmentioning

confidence: 99%

Structural Properties of TaAs Weyl Semimetal Thin Films Grown by Molecular Beam Epitaxy on GaAs(001) Substrates

Sadowski

Domagała

Zajkowska

et al. 2022

Crystal Growth & Design

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“…Analysis of the transport data show that the electron mobility of TaAs is 𝜇𝜇 𝑒𝑒 (10𝐾𝐾) = 6.04 𝑚𝑚 2 𝑉𝑉 −1 𝑠𝑠 −1 and for the NbAs to be 𝜇𝜇 𝑒𝑒 (10𝐾𝐾) = 83.5 𝑚𝑚 2 𝑉𝑉 −1 𝑠𝑠 −1 , which is comparable to that reported in the literature. [34][35][36][37] Thus, the above properties suggest that the crystals studied here are reasonable representatives of the crystals reported in the literature. Spectroscopic ellipsometry is performed using Woollam M-2000F focused beam spectroscopic ellipsometer with wavelengths from 1000 nm (1.2 eV) to 200 nm (6 eV).…”

Section: Methodssupporting

confidence: 83%

Comprehensive anisotropic linear optical properties of the Weyl semimetals TaAs and NbAs

Min

et al. 2021

Phys. Rev. B

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Since the experimental discovery of Weyl semimetals, they have attracted significant attention owing to their unique band structure and the chirality of their Weyl points. TaAs and NbAs are two of the earliest identified Weyl semimetals that possess broken inversion symmetry. Linear and nonlinear optics have been employed as tools to probe the Weyl physics in these crystals. Although some literature exists on their linear optical properties, a comprehensive study of its complete anisotropic dielectric function is presently missing. Here, we use eigen-cut crystals to fully determine the complete anisotropic dielectric functions of TaAs and NbAs by combining spectroscopic ellipsometry and density functional theory (DFT). Parameterized Lorentz oscillators are reported from 1.2-6 eV (experiment) and 0-6 eV (DFT). Strong resonances are found below 1 eV, which originate from Ta (5d) to Ta (5d) and As (4p) to Ta (5d) transitions. Given the popular laser wavelengths of 0.7, 1.55, and 3.1 eV, optical transitions near these energies are examined. The contribution of the band structure in the proximity of the Weyl cones to the total linear dielectric function is quantified relative to the contribution from the rest of the Brillouin zone. This analysis shows that the Weyl points contribution to the total dielectric function is highly anisotropic and rises below 0.5 eV; however, these contributions are negligible above 1 eV.

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“…When there is a single type of charge carrier and relaxation rate τ in the transport process, this rule will be tenable and then all the magnetoresistance isotherms collapse on a single curve. If not, the Kohler's rule will be violated, which has been widely observed in the materials with extreme magnetoresistance, like LaBi, TaPn and TaPn 2 (Pn=As and Sb) [27,47,48]. As shown, the magnetoresistance of HoBi obviously deviates from Kohler's rule as well, which may originate from multiband carriers at low temperature, or multiple scattering mechanisms at high temperature.…”

Section: Characterization Of the Magnetoresistance Performancementioning

confidence: 91%

Multiple metamagnetism, extreme magnetoresistance and nontrivial topological electronic structures in the magnetic semimetal candidate holmium monobismuthide

Ruan

Tang

et al. 2019

New J. Phys.

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Inconceivably large changes (up to 10 6 %) of the resistivity induced by external magnetic field-a phenomenon known as the extreme magnetoresistance effect has been reported in a great number of exotic semimetals. The very recent and exciting discoveries mainly pay attention to the compounds without magnetic ground states, which appears to limit the potential growth of semimetal family. For fundamental scientific interests, introduction of spin degree of freedom would provide an almost ideal platform for investigating the correlation effect between magnetism, crystallographic structure and electric resistivity in materials. Here, we report the experimental observation of metamagnetic behaviors and transport properties of HoBi single crystals. Being a magnetic member of the rare earth monopnictide family, the magnetoresistance of HoBi is significantly modulated by the magnetic orders at low temperature, which shows a nonmonotonic increment across the successive magnetic phases and reaches 10 4 % (9 T and 2 K) in the ferromagnetic state. Kohler's rule predicts that more than one type of carriers dominates the transport properties. Well fitted magnetoresistance and Hall resistivity curves by the semiclassical two-band model suggest that the densities of electron and hole carriers are nearly compensated and the carrier mobilities in this compound are ultrahigh. Besides, the inverted band structures and nonzero Z 2 topological invariant indicate that possible nontrivial electronic states could generate in the ferromagnetic phase of HoBi. Combining the experimental and theoretical results, it is found that the cooperative action of carrier compensation effect and ultrahigh mobility might contribute to the extreme magnetoresistance observed in the titled compound. These findings suggest a paradigm for obtaining the extreme magnetoresistance in magnetic compounds and are relevant to understand the rare-earth-based correlated topological materials. tunnel magnetoresistance [2-5], extremely large magnetoresistance have attracted increasing interest [6, 7], since it not only offer the potential to design new devices, but also pose challenges to understand the fundamental phenomena in nature. The extreme magnetoresistance has been widely reported in the classic elemental semimetal Bi, topological semimetals WTe 2 , Cd 3 As 2 , TaPn (Pn = As, Sb) family, pyrite-type PtBi 2 , RPtBi (R=Nd, Gd), RPn (R=rare earth; Pn = Sb, Bi) and so on . Ever since the unprecedentedly large magnetoresistance is revealed in LaSb, the research enthusiasm on rare earth monopnictides RPn (R=rare earth, Pn = Sb, Bi) is inspired [16][17][18][19][20][21][22][23][24][25][26][27][28][29][30]. The family has been widely studied in the 1980-90s for its heavy-fermion nature [31]. Intriguingly, the recent calculations predict that LaPn (Pn = N, P, As, Sb, and Bi) could be a topological prototype material with band inversion at X point of the bulk fcc Brillouin zone [32]. Afterwards, further investigation on this family has been systematically performe...

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Crystal growth and transport properties of Weyl semimetal TaAs

Cited by 17 publications

References 37 publications

Structural Properties of TaAs Weyl Semimetal Thin Films Grown by Molecular Beam Epitaxy on GaAs(001) Substrates

Structural Properties of TaAs Weyl Semimetal Thin Films Grown by Molecular Beam Epitaxy on GaAs(001) Substrates

Comprehensive anisotropic linear optical properties of the Weyl semimetals TaAs and NbAs

Multiple metamagnetism, extreme magnetoresistance and nontrivial topological electronic structures in the magnetic semimetal candidate holmium monobismuthide

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