Crystal growth at high temperatures

Silicon ribbon growth by a capillary action shaping technique. Annual report (Quarterly technical progress report No. 9)

“…It ohould be noted LhaL the grain structure ok this material is very similar to that reported by Fischer and Pschunder growth is an effective simple technique used for many metals and alkali halides (6). The container should be inert and the material to be grown should contract upon freezing or at least not stick to the crucible walls.…”

“…e n u a t i o n s e t t i n g . LogRi t h u s v a r i e s from6.301 t o 6.342.A rounded v a l u e o f l o g R = 6 . 3 i r e p r e s e n t s an e r r o r of less t h a n 2 % .The l o g c o n v e r t e r i n p u t c u r r e n t ( i ) i n eq.…”

Crystal Pulling from the Melt

“…Cross-sectional view of an X-ray imaging system fitted to a high pressure LEC puller for the growth of gallium phosphide. (1) X-ray source, (2) aluminium windows, (3) X-ray image intensifier, (4) TV camera, (5) radiation shields and (6) …”

“…A review of melt growth techniques by Zerfoss et al [1] at that conference included a description of the Kyropoulunechnique in which a seed crystal is dipped into a (fluxed) melt contained in a crucible which is then slowly cooled but the concept of steadily withdrawing that crystal from the melt was not considered.…”

Quick Connector for Multipoint Thermocouple Assemblies

“…9 Once the crystal is grown, the experimental chamber can be brought to any required temperature. By a proper adjustment of the currents in the two heaters, it is quite easy to get the same temperature throughout the chamber, the temperature gradient being never greater than O.SoC/cm.…”