Crystal growth kinetics of Sb2S3 in Ge–Sb–S amorphous thin films

Barták, Jaroslav; Málek, Jiřı́

doi:10.1007/s10973-011-2171-8

Cited by 9 publications

(11 citation statements)

References 21 publications

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“…Nevertheless, it can be expected for the thin-film data. A similar phenomenon was observed in recent publications dealing with crystal growth in thin films of chalcogenide materials. ,,,− …”

Section: Resultssupporting

confidence: 86%

Comparison of Lateral Crystal Growth in Selenium Thin Films and Surface of Bulk Samples

Barták

Valdés

Málek

et al. 2018

Crystal Growth & Design

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Crystal growth in the surface of selenium bulk samples and in selenium thin films of different thicknesses has been studied under isothermal conditions using different microscopy techniques (optical, infrared, and scanning electron microscopy). The structure of the formed crystals is described with respect to previous publications focused on crystal growth in selenium thin films and bulk samples. Crystal growth rates were obtained from the linear dependence of crystal sizes on annealing time. Such behavior assumes that crystal growth is driven by liquid–crystal interface kinetics. The crystal growth rates found in the surface of bulk samples are comparable with those found in thin films and a few orders of magnitude higher than previously published growth rates of volume crystals formed in selenium undercooled melts. The crystal growth rates were scaled with the viscosities to analyze the Stokes–Einstein relation. A relatively high decoupling between the crystal growth rate and viscosity occurs in the studied samples of amorphous selenium. Therefore, the standard screw dislocation growth model is corrected for the decoupling, which provides a satisfactory description of the crystal growth rate over a wide temperature range.

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Section: Resultssupporting

confidence: 86%

Comparison of Lateral Crystal Growth in Selenium Thin Films and Surface of Bulk Samples

Barták

Valdés

Málek

et al. 2018

Crystal Growth & Design

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“…Because of these reasons and because the crystalline phase formed is only Sb 2 S 3 , the authors use the temperature of melting (T m = 823 K) and entropy of melting (ΔS f /R = 5.94) of pure Sb 2 S 3 published by Johnson et al [39]. The same approximation was used in previous studies dealing with the crystal growth in the GeS 2 -Sb 2 S 3 pseudobinary system [8,9,17,21,24,29,30,38]. Viscosities were calculated from the data published by Shánělová et al [40,41].…”

Section: Discussionmentioning

confidence: 99%

“…The Ge-Sb-S system has been intensively studied for a few decades; its crystallization process has been investigated by means of DTA [19,20], DSC [21][22][23][24][25][26][27][28] and TMA [8,9]. Also there have been several investigations on crystal growth in (GeS 2 ) x (Sb 2 S 3 ) 1 − x system using optical microscopy technique [9,17,21,24,[29][30][31]. From these previous studies, it seems evident that the crystallization process starts from randomly distributed nuclei within the volume of the annealed samples and the morphology of growing crystals is dependent on composition.…”

Section: Introductionmentioning

confidence: 99%

Crystal growth in (GeS 2 ) x (Sb 2 S 3 ) 1−x thin films

Barták

Podzemná

Málek

et al. 2015

Journal of Non-Crystalline Solids

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“…The same findings were reported in the paper on crystal growth in Ge−Sb−S thin films. 40,41 The XRD analysis of (GeS 2 ) x (Sb 2 S 3 ) x−1 (x = 0.1, 0.2, 0.3) crystallized thin film performed by Bartaḱ et al 41 revealed that crystalline phase corresponds to orthorhombic Sb 2 S 3 . The composition of thin films studied by Bartaḱ et al is somewhat different (Ge 2.1 Sb 37.5 S 60.4 ) from ours; nevertheless, it will be shown (see the Discussion) that the composition does not significantly influence the crystal growth kinetics.…”

Section: ■ Resultsmentioning

confidence: 99%

“…Many studies on the crystallization process using DTA, , DSC, − and thermomechanical analysis , have been performed. There also have been direct investigations on crystal growth in the (GeS 2 ) x (Sb 2 S 3 ) x −1 system using optical microscopy. ,,,− The study of nucleation kinetics was made in (GeS 2 ) 0.9 (Sb 2 S 3 ) 0.1 thin films using a double-stage heat treatment method and optical microscopy . The Ge–Sb–S system is of interest to researchers for its applications in optoelectronics in the IR region, photocatalysis, and solar energy conversion …”

Section: Introductionmentioning

confidence: 99%

Transient Nucleation in Ge–Sb–S Thin Films

Martinková

Shánělová

Barták

et al. 2018

Crystal Growth & Design

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The crystal nucleation behavior and kinetics in Ge1.8Sb36.8S61.4 thin films were studied using optical microscopy coupled with a computer-controlled heating stage. The single-stage in situ heat treatment method was chosen for the study of nucleation. In-situ experiments were performed in the temperature range of 236–295 °C. The time evolution of the number of nuclei at various temperatures revealed transient behavior at low nucleation times. The transient nucleation data were described using the Shneidman equation to get values of steady-state nucleation rate, induction period, and time-lag of nucleation for the studied temperatures. On the basis of nucleation experiments, the temperature dependence of crystal–liquid surface energy and decoupling of nucleation rate and viscosity was assessed. The nucleation rate data obtained from microscopy measurements were discussed in terms of classical nucleation theory. It was found that the nucleation curve with the maximum at 288 °C and previously published growth curve with maximum at 309 °C overlap significantly.

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Crystal growth kinetics of Sb2S3 in Ge–Sb–S amorphous thin films

Cited by 9 publications

References 21 publications

Comparison of Lateral Crystal Growth in Selenium Thin Films and Surface of Bulk Samples

Comparison of Lateral Crystal Growth in Selenium Thin Films and Surface of Bulk Samples

Crystal growth in (GeS 2 ) x (Sb 2 S 3 ) 1−x thin films

Transient Nucleation in Ge–Sb–S Thin Films

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