Crystal growth of nitride-rich GaNP by laser-assisted metalorganic chemical-vapor deposition

First-Principle Electronic Properties of Dilute-P GaN1−xPx Alloy for Visible Light Emitters

“…In comparison to the progress in the InGaN and AlGaN alloys, the research involving the common-anion nitride-based ternary alloy such as the dilute-P GaNP alloy is still at its early stage 13 14 15 16 17 18 19 20 21 22 . The crystal growth of dilute-P GaNP was first successfully carried out by Igarashi and co-workers with halide vapor phase epitaxy 13 .…”

Growth and characteristics of GaNxP1−x alloys by magnetron reactive sputtering on GaN

“…The XRD and EPMA analysis results indicate that the nitrogen content, x, in the GaN x P 1Àx was 68.75% and 65.59%, respectively. This is the highest nitrogen content ever reported in a GaN x P 1Àx alloy [1][2][3][4][5][6]10,11]. However, the nitrogen content was almost the same in all samples deposited under varying nitrogen flow rates between 10 and 40 sccm.…”

“…Most of these alloys were grown using molecular beam epitaxy (MBE), [1] gas source MBE (GSMBE), [2][3][4] metalorganic chemical vapor deposition (MOCVD), [5] and laser-assisted metalorganic chemical vapor deposition (LA-MOCVD), [6] because these epitaxial growth techniques yield GaN x P 1Àx alloys with high nitrogen concentrations. In this study, a uniform GaNP alloy was fabricated with high nitrogen content on a GaN buffer layer or C-face (0 0 0 1) sapphire substrate.…”

First-Principle Study of the Optical Properties of Dilute-P GaN1−xPx Alloys

“…Then, using the molecular beam epitaxy (MBE) technique, Iwata and co-workers synthesized the dilute-P GaNP material and have shown a red-shift of ~0.15 eV by incorporating minute amounts of phosphorus (~1–2%) into the GaN-based system 36 . Moreover, Yoshida and co-workers successfully integrated the dilute-P GaNP material into a single quantum well (SQW) light emitting device by using the metal organic chemical vapor deposition (MOCVD) technique 37 . However, despite the previously demonstrated epitaxial feasibility of the dilute-P GaNP semiconductor, there remains a lack of knowledge about the fundamental material properties instrumental for grasping the full potential of this III-nitride-based material system.…”