1990
DOI: 10.1080/01418619008234953
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Crystal growth of radiating filaments of α-SiC formed by the conically converging shock-wave technique

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Cited by 11 publications
(6 citation statements)
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“…Formation of carbon onions under shock conditions using explosives has been reported. , In plate-impact experiments, however, it is reported that carbon precursors (furfural resin: carbon ∼ 90%, oxygen ∼ 7%, hydrogen ∼ 3%) mixed with copper powder was transformed into only diamond with no trace of carbon onions in the recovered samples . In either case, the starting carbon materials are considered decomposed or melted.…”
mentioning
confidence: 99%
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“…Formation of carbon onions under shock conditions using explosives has been reported. , In plate-impact experiments, however, it is reported that carbon precursors (furfural resin: carbon ∼ 90%, oxygen ∼ 7%, hydrogen ∼ 3%) mixed with copper powder was transformed into only diamond with no trace of carbon onions in the recovered samples . In either case, the starting carbon materials are considered decomposed or melted.…”
mentioning
confidence: 99%
“…In either case, the starting carbon materials are considered decomposed or melted. We conducted a plate-impact shock experiment with similar shock conditions as in ref , but used SiC (almost pure 6H type) as a source of carbon instead of carbon soot because SiC decomposes under strong shock conditions . The SiC polycrystalline powder (5 wt %) mixed with copper powder (95 wt %) was pressed into a stainless steel capsule and used as a sample.…”
mentioning
confidence: 99%
“…In CVD experiments diamond commonly grows on silicon-containing substrates and does so via an interfacial layer of 4H-SiC (Sato & Kamo 1992)./3-SIC and 2H-SiC are believed to be the low-temperature forms of the mineral (produced from 1500 to 2000°C) whereas oz-SiC (4H, 6H, 8H) is the higher-temperature polytype (Yamada & Tobisawa 1990). Furthermore, 4H-SiC has the highest growth rate of any of the silicon carbide polytypes produced during epitaxial growth by sublimation onto Si surfaces (Kalnin et al 1994).…”
Section: Diamonds and Silicon Carbide From The Ries Cratermentioning
confidence: 99%
“…SiC has not been observed amongst the products of shock experiments performed under a variety of conditions to produce diamond. However, c~-SiC can be produced from a vapour containing silicon and carbon created by shaped charge experiments to shock powdered/3-SIC (Yamada & Tobisawa 1990).…”
Section: Diamonds and Silicon Carbide From The Ries Cratermentioning
confidence: 99%
“…To the author's knowledge, direct shock synthesis of a g-B-C-N system from BN and condensed carbon has not been accomplished. The author has applied this technique to study the crystal-growth mechanisms of fine particles from vapor under chaotic conditions 6,7 and to produce superhard materials from powdered substances. 8 The superhard materials have been prepared from several types of fine B 4 C particles via condensation of the vapor generated from the powdered mixture of amorphous boron nitride/carbon black (a-BN/CB).…”
Section: Introductionmentioning
confidence: 99%