Crystal Growth of Silicon for Solar Cells

Nakajima, Kazuo; Usami, Noritaka

doi:10.1007/978-3-642-02044-5

Advances in Materials Research

2010

DOI: 10.1007/978-3-642-02044-5

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Crystal Growth of Silicon for Solar Cells

Kazuo Nakajima¹,

Noritaka Usami²

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Cited by 20 publications

(1 citation statement)

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“…Upon annealing of this stack in an inert atmosphere at subeutectic (T < 577 °C) 1) temperatures, the a-Si diffuses through the oxide into the Al layer and begins to crystallize, displacing the Al upward. Eventually, Al and Si layers exchange places leaving a p-type 2) polycrystalline Si thin film on the amorphous substrate surface [2][3][4] . Note that this process can be used with other group IV materials as well [5][6][7] .…”

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confidence: 99%

Pole figure analysis from electron backscatter diffraction—an effective method of evaluating fiber-textured silicon thin films as seed layers for epitaxy

Hainey

Robin

Amano

et al. 2019

Appl. Phys. Express

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Because of their >95% (111) surface orientation and very large (10–300 μm) grain sizes, sub-50 nm Group IV thin films fabricated by metal-induced crystallization are promising seed layers for epitaxy. However, methods for evaluating Group IV film quality for subsequent homo-and heteroepitaxial growth have not been widely reported. Here, we show how pole figures obtained by electron backscatter diffraction allow for texture analysis and measurement of grain misorientation. Correlations with Group IV thin film processing parameters such as annealing temperature and film quality in heteroepitaxially grown GaN films are developed.

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mentioning

confidence: 99%

Pole figure analysis from electron backscatter diffraction—an effective method of evaluating fiber-textured silicon thin films as seed layers for epitaxy

Hainey

Robin

Amano

et al. 2019

Appl. Phys. Express

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Dislocations in Crystalline Silicon Solar Cells

Wang,

Liu,

et al. 2023

Adv Energy and Sustain Res

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Dislocation is a common extended defect in crystalline silicon solar cells, which affects the recombination characteristics of solar cells by forming deep‐level defect states in the silicon bandgap, thereby reducing the lifetime of minority carrier. Hence, reducing the impact of defects on device performance is an effective strategy to optimize the performance of photovoltaic devices. This article reviews the observation and engineering of dislocation in Si solar cell. The structure and deformation of Si can be directly observed by chemical etching combined with electron microscopy. Also, more information about dislocation is obtained indirectly by monitoring the electrical and optical properties of Si. The classification, density, distribution of dislocations, and their interactions with other defects in Si can affect the lifetime of minority carriers and thereby reduce the performance of Si solar cells. In order to achieve higher cell efficiency, crystals with less or even no dislocation should be obtained. In addition to the specification of controlling the relevant parameters during the growth of silicon ingots to obtain the minimum dislocation density, it is necessary to study the behavior of dislocation in Si wafers under the combined action of external stress, temperature, and other defects.

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Polycrystalline silicon wafer with columnar grain structure grown directly on silicon carbide coated graphite substrate

et al. 2012

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Crystal Growth of Silicon for Solar Cells

Cited by 20 publications

References 44 publications

Pole figure analysis from electron backscatter diffraction—an effective method of evaluating fiber-textured silicon thin films as seed layers for epitaxy

Pole figure analysis from electron backscatter diffraction—an effective method of evaluating fiber-textured silicon thin films as seed layers for epitaxy

Dislocations in Crystalline Silicon Solar Cells

Polycrystalline silicon wafer with columnar grain structure grown directly on silicon carbide coated graphite substrate

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