Crystal Lattice Damage and Recovery of Rare-Earth implanted Wide Bandgap Oxides

Abstract

Rare earth (RE) elements are important for the optical tuning of wide bandgap oxides (WBO) such as β-Ga 2 O 3 or ZnO, because β-Ga 2 O 3 :RE or ZnO:RE show narrow emission lines in the visible, ultra-violet and infra-red region. Ion implantation is an attractive method to introduce dopant into the crystal lattice with an extraordinary control of the dopant ion composition and location, but it creates the lattice damage, which may render the dopant optically inactive. In this research work, we investigate the post-implantation crystal lattice damage of two matrices of wide-bandgap oxides, β-Ga 2 O 3 and ZnO, implanted with rare-earth (RE) to a fluence of 5×10 14 , 1×10 15 and 3×10 15 atoms/cm 2 , and post-growth annealed in Ar and O 2 atmosphere, respectively. The effect of implantation and annealing on both crystal lattices was investigated by channeling Rutherford backscattering spectrometry (RBS/C) technique. The level of crystal lattice damage caused by implantation with the same RE fluences in the case of β-Ga 2 O 3 seems to be higher than in the case of ZnO. Low temperature photoluminescence was used to investigate the optical activation of RE in both matrices after performed annealing.

Time-Resolved Sensitivity of a Cadmium-Doped Copper Oxide Thin Film as a Chlorine Gas Detector

“…The study of Cd-doped CuO at Cd concentrations 0.1%, 0.2%, and 4% revealed the XRD pattern displayed in Figure 1 The decrease in intensity of the CuO diffraction lines can be attributed to the Cd diffraction centers' dominance over CuO [28,29]. The basic Scherrer equation [27] (1) estimated the crystallite size G. Where k is Scherrer constant and is taken at 0.9, FWHM is the full width at half maximum of the most intense peak.…”