Crystal morphology of spherical silicon particles produced by jet-splitting method

Kuzuoka, Yoshikazu; Isomae, Seiichi; Yamaguchi, Yukio

doi:10.1016/j.jcrysgro.2007.02.030

Cited by 7 publications

(6 citation statements)

References 11 publications

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“…2 shows the surface morphology of silicon microspheres of 1mm in diameter with (a) (b) rough and (c) (d) smooth surfaces fabricated by the drop method [23]. Because the silicon microspheres formed by this method generally had poor crystallinity, containing high-density grain boundaries, point defects, and dislocations [31][32][33], some researchers have been working on improving their quality and the yield [29,[34][35][36][37]. For instances, Liu et al [34] developed a novel seeding crystallization technique by ejecting silicon powders onto the molten silicon droplets and they obtained silicon microspheres with a size distribution around 1.0 mm in diameter.…”

Section: Physical Methodsmentioning

confidence: 99%

Synthesis of Silicon Microspheres

Liu

Zhang

et al. 2016

MSF

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The synthesis of silicon microspheres is of outmost importance, especially for the production of optical and electrical devices due to their unique properties displayed by this material. In this paper, we review the research on the synthesis of silicon microspheres, including one physical method, the drop method and several chemical methods, such as vapor-phase reaction, vapor-solid reaction, liquid phase reaction and magnesio-thermal reduction method. The formation mechanisms for silicon microsphere particles are also summarized.

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Section: Physical Methodsmentioning

confidence: 99%

Synthesis of Silicon Microspheres

Liu

Zhang

et al. 2016

MSF

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“…During the formation of a solid aggregate ( Figure 5) an interface is generated between it and the surrounding liquid. This interface is associated with free energy per unit of surface σ proportional to the solid in formation size [43,44,45,46,47,48]. The total change in free energy ΔG is equal to When the solid aggregate is very small, a further size increase causes an increase in free energy.…”

Section: Interpretation In the Context Of The Classical Nucleation Thmentioning

confidence: 99%

On the Formation and On the Surface of Inorganic Lead, Barium and Antimony Based Gunshot Residues: A Thermodynamic Approach

Nunziata¹,

Morin²

2017

Journal of Forensic Science & Criminology

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In their first full report on the analysis of GSR by SEM-EDS, Wolten and colleagues stated that the great majority of the gunshot residue particles (GSR), between 70 to 100%, have a characteristic morphology thus providing a detection criterion holding significance equal to that provided by the elemental composition. In fact, the particles must have a spherical or spheroidal shape and their surface should appear amorphous, devoid of any crystalline characteristic.

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“…9 Since the structural properties, the impurities, and the defects in the Si spheres have a great impact on the device performance, 2,10 it is crucial to comprehensively characterize the Si spheres and to investigate the growth process in order to achieve higher material quality. A number of studies have been dedicated to the crystal evaluation 11 and the crystallinity improvement 12,13 of Si spheres fabricated by the ''drop'' method.…”

Section: Introductionmentioning

confidence: 99%

Growth and Structural Characterization of Spherical Silicon Crystals Grown from Polysilicon

Gharghi

Sivoththaman

2008

Journal of Elec Materi

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The growth process for spherical silicon crystals using melting and recrystallization of polysilicon powder and polysilicon granules is investigated and the structural properties of the fabricated silicon spheres are characterized. The recrystallization conditions that influence the crystallinity of the spheres are studied. It is shown by means of defect delineation that crystalline structures are obtained when the melt is solidified at temperatures above 1400°C. The results of electron backscattering confirm the formation of singlegrain structures. When solidification takes place at temperatures below 1400°C, double-and multiple-grain structures start to form. The concentration of impurities during the recrystallization of the spheres, monitored by secondary-ion mass spectroscopy, show that the rate of impurity removal from the crystalline phase is much lower than predicted by segregation at the meltsolid interface, which is attributed to the nonequilibrium conditions in the solidification process.

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Crystal morphology of spherical silicon particles produced by jet-splitting method

Cited by 7 publications

References 11 publications

Synthesis of Silicon Microspheres

Synthesis of Silicon Microspheres

On the Formation and On the Surface of Inorganic Lead, Barium and Antimony Based Gunshot Residues: A Thermodynamic Approach

Growth and Structural Characterization of Spherical Silicon Crystals Grown from Polysilicon

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