Crystal orientation of β-Ga2O3 thin films formed on c-plane and a-plane sapphire substrate

High-sensitivity β-Ga_2O_3 solar-blind photodetector on high-temperature pretreated c-plane sapphire substrate

“…However, the substrate-annealing temperature must be sufficiently high that improvements in photodetection properties outweight the negative impact of the I dark increase. As a result, PD-1050 presented extremely high sensitivity: high responsivity of 54.9 A/W and large D* of 3.71 × 10 14 Jones. Both parameters were increased by one order of magnitude compared with those of PD-0.…”

“…Accordingly, researchers have attempted improve the crystalline quality of β-Ga 2 O 3 thin films. For example, the c-plane (0001) of sapphire substrates are often adopted for the epitaxial growth of β-Ga 2 O 3 thin films due to the high similarity in the oxygen-atom arrangement between the β-Ga 2 O 3 ( 2 01) plane and the sapphire c-plane [14]. Moreover, process conditions, for example, substrate temperature, oxygen pressure, and post-deposition annealing, have to be carefully optimized [15].…”

Deep ultraviolet photodiodes based on the β-Ga2O3/GaN heterojunction

“…The substrate temperature was kept at 800 • C and the radio frequency power for the oxygen plasma was 100 W. The method for the formation of ␤-Ga 2 O 3 layer has been described in reference [10].…”

Mg-doped β-Ga2O3 films with tunable optical band gap prepared on MgO (110) substrates by metal-organic chemical vapor deposition

“…There are many different methods used to synthesize β-Ga 2 O 3 films such as sputtering [9,10], thermal evaporation [11,12], pulsed laser deposition (PLD) [13,14], molecular beam epitaxy (MBE) [3,15] and metal-organic chemical vapor deposition (MOCVD) [16]. The doping of β-Ga 2 O 3 films with different dopants such as Si [17] and Cu [18] has also been reported.…”