Some interest has been directed recently to neodymium doped crystals with strong inhomogeneous broadening of absorption bands which are be= lieved to be better suited for diode pumping than the crystals with ordered 1attice. The disordered Nd-doped crystals may be obtained in two ways. The first one is to introduce a structural disorder in ordered lattice by substitut-, ing partially one or more cations by cations with different charges. Alternatively, the compounds with inherently disordered structure are synthesized and doped with Nd. We consider two wide families of compounds of general formulae ABC3 O 7 and ABCO 4 where A stands for Ca, Sr, Ba, B is Y or rare earth and C stands for Ga or Al. Both the families form the crystals with inherently disordered structure and can accept an appreciable amount of Nd. Results of structural and spectroscopic investigations are used to determine material's parameters relevant to laser performance. Comparison of several disordered crystals is made and their suitability for diode pumping is discussed.PACS numbers: 78.45.+h, 78.55.Ηx In the past few years a considerable progress has been made in the field of laser diodes. Powerful laser diodes are now easily available and they are replacing the conventional broad band sources of optical pumping for rare earth doped laser materials. In particular, the emission of the AlGaAs laser diode matches perfectly the absorption band of neodymium situated at about 800 nm and corresponding to the 4Ι9 /2 →4 F5/ 2, 2Η9/ 2 transition.The energy level scheme for trivalent neodymium in dielectric crystals is shown in Fig. 1. It can be seen that the pump level and the upper laser level are separated by small energy gap of about 2000 cm -1 , thus the excitation decays quickly by multiphonon emission to upper laser level. Since the wavelength of laser transition is close to 1.06 μm and the wavelength of the pump transition is about 808 nm, the energy loss due to photon decrement is only 24%. As a result, the heating of laser active material is considerably less important than in the case of broad band pumping to higher lying levels. There are however some characteristic properties of laser diode which should be taken into account. First, the spectral bandwidth of laser diode emission is relatively broad. Second, the wavelength of laser diode emission depends strongly on diode temperature, typically (945)