Crystal structure and physical properties of the Sr-vacant spin-orbit-coupling induced Mott insulator Sr2−IrO4

Kong, Jimei; Liu, Shengli; Cheng, Jie; Wang, Haiyun; Li, Xing’ao; Wang, Z.H.

doi:10.1016/j.ssc.2015.07.005

Cited by 10 publications

(7 citation statements)

References 38 publications

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“…In order to elucidate the conductivity mechanism of Sr 2−x Sm x IrO 4 , various hopping models are employed to analyze the temperature dependence of the resistivity [22,30,31]. It is important to note that no modes could fit the resistivity data well in the whole temperature ranges.…”

Section: Electrical Transport Studymentioning

confidence: 99%

Non-monotonic effect of the electronic transport and magnetic properties in a Sm-doped Sr _2−x Sm _x IrO ₄ system

Zhu¹,

Liu²,

Cheng³

et al. 2018

EPL

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Sr2IrO4 has been shown to host a novel J eff = 1/2 Mott spin-orbit insulating state with antiferromagnetic ordering. Here, the effects of Sm substitution at Sr-site on structural, electrical and magnetic properties are studied in Sr2IrO4. Sm-doped samples still retain the insulating behavior, but with the increase of Sm-doping concentration x, the resistivity firstly decreases for x ≤ 0.1 and then increases. We found that the increment of the Ir-O-Ir bond angle, combined with the modulation of the regularity of IrO6 octahedra, results in the nonmonotonic variation of resistivity with x. On the other hand, there are two types of magnetic exchange interactions (i.e., Ir 4+ -O-Ir 4+ and Sm 3+ -O-Ir 4+ ) in the Sm-doped Sr2−xSmxIrO4 system. The antiferromagnetic component is greatly suppressed in the low concentration x and then an ascension emerges in the high concentration x, which is attributable to the competition between the weakened Ir 4+ -O-Ir 4+ and enhanced Sm 3+ -O-Ir 4+ exchange interactions.

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Section: Electrical Transport Studymentioning

confidence: 99%

Non-monotonic effect of the electronic transport and magnetic properties in a Sm-doped Sr _2−x Sm _x IrO ₄ system

Zhu¹,

Liu²,

Cheng³

et al. 2018

EPL

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“…7,14,15 There have been theoretical proposals and experimental observations of underlying signatures of superconductivity in Sr 2 IrO 4 via both electron 5,7,[16][17][18] and hole doping. 19,20 In this context, Rh doped Sr 2 Ir 1−x Rh x O 4 has attracted much attention as it displays pseudogap region in ARPES experiments 14 and hidden broken symmetry in second-harmonic generation experiments 21 raising prospects for the possibility of superconductivity in Sr 2 IrO 4 doped with Rh or other 4d elements.…”

mentioning

confidence: 99%

Charge partitioning and anomalous hole doping in Rh-doped Sr2IrO4

et al. 2017

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The simultaneous presence of sizable spin-orbit interactions and electron correlations in iridium oxides has led to predictions of novel ground states including Dirac semimetals, Kitaev spin liquids, and superconductivity. Electron and hole doping studies of spin-orbit assisted Mott insulator Sr2IrO4 are being intensively pursued due to extensive parallels with the La2CuO4 parent compound of cuprate superconductors. In particular, the mechanism of charge doping associated with replacement of Ir with Rh ions remains controversial with profound consequences for the interpretation of electronic structure and transport data. Using x-ray absorption near edge structure (XANES) measurements at the Rh L, K-and Ir L-edges we observe anomalous evolution of charge partitioning between Rh and Ir with Rh doping. The partitioning of charge between Rh and Ir sites progresses in a way that holes are initially doped into the J eff =1/2 band at low x only to be removed from it at higher x values. This anomalous hole doping naturally explains the reentrant insulating phase in the phase diagram of Sr2Ir1−xRhxO4 and ought to be considered when searching for superconductivity and other emergent phenomena in iridates doped with 4d elements.

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“…As is known to all, material properties are in a close relationship with their atomic structure. Several reports pointed out that carrier doping can alter lattice parameters and further change the electronic and magnetic behaviors of Sr 2 IrO 4 [18][19][20][21]. Thus, one of the important issues to be resolved for Sr 2 IrO 4 -based system is how carrier doping affect their physical properties in terms of local atomic structure.…”

Section: Introductionmentioning

confidence: 99%

A critical point in Sr2-IrO4 and less distorted IrO6 octahedra induced by deep Sr-vacancies

Cheng

Zhu

Liu

et al. 2017

Materials Research Bulletin

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For the Sr 2-x IrO 4 system, recent work pointed out the abnormal electronic and magnetic properties around a critical point. Here, to understand Sr-vacancy effect on spin-orbit coupled Mott insulator Sr 2 IrO 4 , the electronic structure and local structure distortion for Sr 2-x IrO 4 system have been investigated by x-ray absorption spectroscopy (XAS). By comparing the intensity of white-line features at the Ir L 2,3 -edge x-ray absorption near-edge spectroscopy (XANES), we observe a sudden rise of the branching ratio in the vicinity of the critical point. Further analysis on the Ir L 3 -edge extended x-ray absorption fine structure (EXAFS) and calculated data demonstrated that the abrupt enhancement of the branching ratio is intimately related to the less distorted IrO 6 octahedra induced by deep Sr-vacancies, which in turn alters the relatively strength of the spin-orbit coupling (SOC) and crystal electric field (CEF) that would dictate the abnormal behavior of electronic and magnetic structure near the critical point.

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Crystal structure and physical properties of the Sr-vacant spin-orbit-coupling induced Mott insulator Sr2−IrO4

Cited by 10 publications

References 38 publications

Non-monotonic effect of the electronic transport and magnetic properties in a Sm-doped Sr _2−x Sm _x IrO ₄ system

Non-monotonic effect of the electronic transport and magnetic properties in a Sm-doped Sr _2−x Sm _x IrO ₄ system

Charge partitioning and anomalous hole doping in Rh-doped Sr2IrO4

A critical point in Sr2-IrO4 and less distorted IrO6 octahedra induced by deep Sr-vacancies

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Crystal structure and physical properties of the Sr-vacant spin-orbit-coupling induced Mott insulator Sr2−IrO4

Cited by 10 publications

References 38 publications

Non-monotonic effect of the electronic transport and magnetic properties in a Sm-doped Sr 2−x Sm x IrO 4 system

Non-monotonic effect of the electronic transport and magnetic properties in a Sm-doped Sr 2−x Sm x IrO 4 system

Charge partitioning and anomalous hole doping in Rh-doped Sr2IrO4

A critical point in Sr2-IrO4 and less distorted IrO6 octahedra induced by deep Sr-vacancies

Contact Info

Product

Resources

About

Non-monotonic effect of the electronic transport and magnetic properties in a Sm-doped Sr _2−x Sm _x IrO ₄ system

Non-monotonic effect of the electronic transport and magnetic properties in a Sm-doped Sr _2−x Sm _x IrO ₄ system