Bi2Te3-based alloys are the main
materials
for the construction of low- and medium-temperature thermoelectric
modules. In this work, the microstructure and thermoelectric properties
of Cl-doped Bi2Te3–x
Se
x
alloys were systematically investigated
considering the high anisotropy inherent in these materials. The prepared
samples have a highly oriented microstructure morphology, which results
in very different thermal transport properties in two pressing directions.
To accurately separate the lattice, electronic, and bipolar components
of the thermal conductivity over the entire temperature range, we
employed a two-band Kane model to the Cl-doped Bi2Te3–x
Se
x
alloys.
It was established that Cl atoms act as electron donors, which tune
the carrier concentration and effectively suppress the minority carrier
transport in Bi2Te3–x
Se
x
alloys. The estimated value of the
lattice thermal conductivity was found to be as low as 0.15 Wm–1 K–1 for Bi2Te3–x–y
Se
x
Cl
y
with x = 0.6
and y = 0.015 at 673 K in parallel to the pressing
direction, which is among the lowest values reported for crystalline
materials. The large reduction of the lattice thermal conductivity
in both pressing directions for the investigated Bi2Te3–x
Se
x
alloys
is connected with the different polarities of the Bi-(Te/Se)1 and
Bi-(Te/Se)2 bonds, while the lone-pair (Te/Se) interactions are mainly
responsible for the extremely low lattice thermal conductivity in
the parallel direction. As a result of the enhanced power factor,
suppressed bipolar conduction, and ultralow lattice thermal conductivity,
a maximum ZT of 1.0 at 473 K has been received in the Bi2Te2.385Se0.6Cl0.015 sample.