Crystal structure, electronic and transport properties of AgSbSe2 and AgSbTe2

Wojciechowski, K.; Toboła, J.; Schmidt, M.; Zybała, Rafał

doi:10.1016/j.jpcs.2008.06.148

Cited by 53 publications

(42 citation statements)

References 18 publications

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“…In AgSbSe 2 the KKR-CPA calculations yielded an electronic spectrum that exhibits a deep and narrow density-ofstates (DOS) valley resulting from an important hybridization of d-Ag and p-(Se,Sb) states. 5 The Fermi level falls precisely at the DOS minimum. The pseudogap corresponds with semimetallic character of measured r(T) curves as well as with large positive thermopower supported by quite strong DOS variation near the valence band edge.…”

Section: Electronic Structurementioning

confidence: 98%

“…Measurement of diffuse reflectance in AgSbSe 2 and AgSbTe 2 provided the evidence of the apparent bandgap (of about 1.03 eV 6 and 0.35 eV 7 for AgSbSe 2 and AgSbTe 2 , respectively), whereas electrical conductivity measurements at room temperature 5 suggested semimetallic behavior of both compounds. de Haas-van Alphen effect measurements show that AgSbTe 2 is a semiconductor with a very narrow energy gap of approximately 7 meV, but according to the authors, it can be considered as an indirect zero-gap material above 100 K. 8 On the other hand, we have recently found that homogenous and isostructural AgSbSe 2 -AgSbTe 2 solid solutions exhibit evident semiconducting temperature dependence of electrical conductivity 9 (E g % 0.3 eV).…”

Section: Introductionmentioning

confidence: 97%

“…4,5 It is commonly assumed that this compound crystallizes in a cubic NaCl-type structure (s.g. Fm " 3m) in which Ag and Sb randomly occupy the same crystallographic Wyckoff position. [1][2][3] The disordered character of this ternary chalcogenide, as well as of other isostructural compounds from the group of cubic I-V-VI 2 semiconductors, is considered to be the main factor accounting for their extremely low thermal conductivity.…”

Section: Introductionmentioning

confidence: 99%

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Influence of Doping on Structural and Thermoelectric Properties of AgSbSe2

Wojciechowski

Schmidt

Toboła

et al. 2009

Journal of Elec Materi

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A series of samples with nominal compositions of AgSb 1Àx Sn x Se 2 (with x = 0.0, 0.1, 0.2, and 0.3) and AgSbSe 2Ày Te y (with y = 0.0, 0.25, 0.5, 0.75, and 1.0) were prepared. The crystal structure of both single crystals and polycrystalline samples was analyzed using x-ray and neutron diffractometry. The electrical conductivity, thermal conductivity, and Seebeck coefficient were measured within the temperature range from 300 K to 700 K. In contrast to intrinsic AgSbSe 2 , samples doped with Sn and Te exhibit apparent semiconducting properties (E g = 0.3 eV to 0.5 eV), lower electrical conductivity, and higher values of the Seebeck coefficient for a small amount of Sn (x = 0.1). Further doping leads to decrease of the thermoelectric power and increase of the electrical conductivity. In order to explain electron transport behavior observed in pure and doped AgSbSe 2 , electronic structure calculations were performed by the Korringa-Kohn-Rostoker method with coherent potential approximation (KKR-CPA).

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Section: Electronic Structurementioning

confidence: 98%

Section: Introductionmentioning

confidence: 97%

Section: Introductionmentioning

confidence: 99%

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Influence of Doping on Structural and Thermoelectric Properties of AgSbSe2

Wojciechowski

Schmidt

Toboła

et al. 2009

Journal of Elec Materi

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“…1,2,10-13 Meanwhile, other critical developments in the module construction, such as in the area of materials junctions (ceramicmetal-TE material, barriers and bonders), are ongoing, [14][15][16] including quality measurements of thermoelectric-thermoelectric (TE-TE) junction in cascaded modules. 17,18 The lifetime and the reliability of thermoelectric modules are also important.…”

Section: 3mentioning

confidence: 99%

Method and Apparatus for Determining Operational Parameters of Thermoelectric Modules

Zybała

Schmidt

Kaszyca

et al. 2016

Journal of Elec Materi

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The main aim of this work was to construct and test an apparatus for characterization of high temperature thermoelectric modules to be used in thermoelectric generator (TEGs) applications. The idea of this apparatus is based on very precise measurements of heat fluxes passing through the thermoelectric (TE) module, at both its hot and cold sides. The electrical properties of the module, under different temperature and load conditions, were used to estimate efficiency of energy conversion based on electrical and thermal energy conservation analysis. The temperature of the cold side, T c , was stabilized by a precise circulating thermostat (£0.1°C) in a temperature range from 5°C to 90°C. The amount of heat absorbed by a coolant flowing through the heat sink was measured by the calibrated and certified heat flow meter with an accuracy better than 1%. The temperature of the hot side, T h , was forced to assumed temperature (T max = 450°C) by an electric heater with known power (P h = 0-600 W) with ample thermal insulation. The electrical power was used in calculations. The TE module, heaters and cooling plate were placed in an adiabatic vacuum chamber. The load characteristics of the module were evaluated using an electronically controlled current source as a load. The apparatus may be used to determine the essential parameters of TE modules (open circuit voltage, U oc , short circuit current, I sc , internal electrical resistance, R int , thermal resistance, R th , power density, and efficiency, g, as a function of T c and T h ). Several commercially available TE modules based on Bi 2 Te 3 and Sb 2 Te 3 alloys were tested. The measurements confirmed that the constructed apparatus was highly accurate, stable and yielded reproducible results; therefore, it is a reliable tool for the development of thermoelectric generators.

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“…Further, the incorporation of indium in Sb-Se system is expected to make it more suitable for reversible optical recording having less erase time [13]. However, an addition of Ag into the Sb-Se system increases its ionic conductivity and causes a large change in resistance with minute change in volume during crystallization to a single crystalline phase [14,15]. The indium based chalcogenide alloys have also found applications as active material in non-volatile memory which uses the reversible phase transition of chalcogenide resistors [16].…”

Section: Introductionmentioning

confidence: 99%

Spectroscopic investigations of polycrystalline In_xSb_20−xAg₁₀Se₇₀ (0 ⩽ × ⩽ 15) multicomponent chalcogenides

Sharma

Kumar

et al. 2016

Materials Science-Poland

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The composition dependence of physical properties of chalcogenides has recently been studied for their phase change properties and energy conversion. In the present work, we report the structure, composition, optical and Raman spectroscopy results for bulk polycrystalline In x Sb 20 − x Ag 10 Se 70 (0 x 15) samples. The phase quantification and composition have been studied by using XRD and EDX techniques. The alloy composition up to 5 at.% of indium resulted in crystallization of AgSbSe 2 , while further increase in In content favored the formation of another chalcopyrite AgInSe 2 phase yielding the solid solutions for this alloy system. A decrease in band gap up to x = 5 followed by its increase with an increase in indium concentration has been observed. The variations in shape and position of characteristic Raman bands has been used for understanding the structural modifications of the network with the variation in indium content.

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Crystal structure, electronic and transport properties of AgSbSe2 and AgSbTe2

Cited by 53 publications

References 18 publications

Influence of Doping on Structural and Thermoelectric Properties of AgSbSe2

Influence of Doping on Structural and Thermoelectric Properties of AgSbSe2

Method and Apparatus for Determining Operational Parameters of Thermoelectric Modules

Spectroscopic investigations of polycrystalline In_xSb_20−xAg₁₀Se₇₀ (0 ⩽ × ⩽ 15) multicomponent chalcogenides

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Crystal structure, electronic and transport properties of AgSbSe2 and AgSbTe2

Cited by 53 publications

References 18 publications

Influence of Doping on Structural and Thermoelectric Properties of AgSbSe2

Influence of Doping on Structural and Thermoelectric Properties of AgSbSe2

Method and Apparatus for Determining Operational Parameters of Thermoelectric Modules

Spectroscopic investigations of polycrystalline InxSb20−xAg10Se70 (0 ⩽ × ⩽ 15) multicomponent chalcogenides

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Product

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Spectroscopic investigations of polycrystalline In_xSb_20−xAg₁₀Se₇₀ (0 ⩽ × ⩽ 15) multicomponent chalcogenides