Time-correlated single
photon counting has been conducted to gain
further insights into the short photoluminescence lifetimes (nanosecond)
of lead iodide perovskite (MAPbI
3
) thin films (∼100
nm). We analyze three different morphologies, compact layer, isolated
island, and connected large grain films, from 14 to 300 K using a
laser excitation power of 370 nJ/cm
2
. Lifetime fittings
from the Generalized Berberan-Santos decay model range from 0.5 to
6.5 ns, pointing to quasi-direct bandgap emission despite the three
different sample strains. The high energy band emission for the isolated-island
morphology shows fast recombination rate centers up to 4.8 ns
–1
, compared to the less than 2 ns
–1
for the other two morphologies, similar to that expected in a good
quality single crystal of MAPbI
3
. Low-temperature measurements
on samples reflect a huge oscillator strength in this material where
the free exciton recombination dominates, explaining the fast lifetimes,
the low thermal excitation, and the thermal escape obtained.