Crystal structure of Si1−xCx films by plasma-enhanced chemical vapor deposition at 700 °C

Abstract

Using x-ray diffraction and electron-spin-resonance measurements, the crystal structure and bonding configurations of Si1−xCx films by plasma-enhanced chemical vapor deposition at 700 °C are shown to change abruptly at around x=0.5. At around this composition, a polycrystalline film with a cubic SiC 〈111〉 preferred orientation and an average grain size of 95 nm is grown on a fused silica substrate under high hydrogen dilution. The structural change can be attributed to an increase in the probability of occurrence of a Si- C4 tetrahedron in a chemically ordered network.

High rate fabrication of room temperature red photoluminescent SiC nanocrystals

“…[15][16][17] The band gap of SiC nanocrystals is widened as a result of quantum confinement which enhances the PL property and blueshifts the PL peaks. [28][29][30][31][32][33] This plasma technique has the ability to dissociate and activate various gas precursors. [22][23][24][25][26][27] Plasma enhanced chemical vapor deposition (PECVD) is a conventional method of fabricating SiC nanocrystals.…”

Carbide, Nitride and Boride Materials Synthesis and Processing

“…For the general formula Si1_xCX/ films are basically amorphous for 0.300 ::; x ::; 0.500, hexagonal and/or rhombohedral SiC crystallites for 0.500::; x ::; 0.525, polycrystalline cubic SiC for 0.525 ::; x ::; 0.550 and randomly oriented hexagonal and/ or rhombohedral for 0.550 ::; x ::; 0.600 (Takeshita et al, 1991). For the general formula Si1_xCX/ films are basically amorphous for 0.300 ::; x ::; 0.500, hexagonal and/or rhombohedral SiC crystallites for 0.500::; x ::; 0.525, polycrystalline cubic SiC for 0.525 ::; x ::; 0.550 and randomly oriented hexagonal and/ or rhombohedral for 0.550 ::; x ::; 0.600 (Takeshita et al, 1991).…”

SiC nanocrystals: high-rate deposition and nano-scale control by thermal plasma

“…[18][19][20] Moreover, PECVD is the most commonly used technique for the production of cubic SiC (3C-SiC and b-SiC), and has also been applied for SiC nanocrystal fabrication during the past decade. [21][22][23][24][25][26][27][28] SiH 4 and hydrocarbons have generally been used as silicon and carbon source gases, respectively, [21][22][23] while organosilane has been used as a single source for both Si and C. 27 Both radio-frequency (RF) plasma 21,22 and electron cyclotron resonance (ECR) plasma 23 could be adopted in PECVD processes. Moreover, SiC nanocrystals can also be deposited by reactive plasma sputtering of bulk Si and C or SiC targets.…”