Energy-efficient
solution-processed organic field-effect transistors
(OFETs) are highly sought after in the low-cost printing industry
as well as for the manufacture of flexible and other next-generation
devices. The fabrication of such electronic devices requires high-functioning
insulating materials that are chemically and mechanically robust to
avoid lowering insulating properties during the device fabrication
process or utilization of devices. In this study, we report a facile,
fluorinated, UV-assisted cross-linker series using a fluorophenyl
azide (FPA), which reacts with the C–H groups of a conventional
polymer. This demonstrates the application of the cross-linked films
in OFET gate dielectrics. The effects of the cross-linkable chemical
structure of the FPA series on the cross-linking chemistry, photopatternability,
and dielectric properties of the resulting films are investigated
for low/high-k or amorphous/crystalline polymeric
gate dielectric materials. The characteristics of insulating layers
and behavior of OFETs containing these cross-linked gate dielectrics
(for example, leakage current density (J), hysteresis,
and charge trap density) depend on the polymer type. Furthermore,
an organic-based complementary inverter and various printable OFETs
with excellent electrical characteristics are successfully fabricated.
Thus, these reported cross-linkers that enable the solution process
and patterning of well-developed conventional polymer dielectric materials
are promising for the realization of a more sustainable next-generation
industrial technology for flexible and printable devices.