Crystalline growth and alloying of In<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" id="d1e630" altimg="si26.svg"><mml:msub><mml:mrow/><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:math>Ga<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" id="d1e638" altimg="si27.svg"><mml:msub><mml:mrow/><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:math>Sb films by electrodeposition onto liquid metal electrodes

Lindsey, Zachary R.; Moran, M.J.; Jacobson, Peter; Smith, Quinlan; West, M.; Francisco, Paolo

doi:10.1016/j.rinp.2021.103857

Cited by 4 publications

(2 citation statements)

References 34 publications

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“…Due to the few free electrons of these elements, the surface tension is small, which can effectively reduce the surface tension of liquid metals. There are many ways to dope elements in liquid metals, such as chemical vapor deposition, 39,40 electrodeposition, 41 and self-deposition. 42 As shown in Fig.…”

Section: Surface Tension Of Liquid Metalsmentioning

confidence: 99%

Recent progress in eutectic gallium indium (EGaIn): surface modification and applications

Ge,

Wang,

Zhu

et al. 2024

J. Mater. Chem. A

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Section: Surface Tension Of Liquid Metalsmentioning

confidence: 99%

Recent progress in eutectic gallium indium (EGaIn): surface modification and applications

Ge,

Wang,

Zhu

et al. 2024

J. Mater. Chem. A

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“…The lattice constant of Ga 1-x In x Sb can also be adjusted by the In ratio (x), with a maximum adjustment range from 6.0959 Å (GaSb) to 6.4794 Å (InSb) [3]. And the band gap can be increased from 0.18 eV (InSb) to 0.725 eV (GaSb) [4,5], and the cutoff wavelength can be adjusted from 1.7 μm (GaSb) to 7.3 μm (InSb) [6]. Therefore, GaInSb crystals can be more widely used in epitaxial substrate materials [7], quantum well lasers [8], high electron mobility transistors [9], thermoelectric materials [10,11], as well as infrared (IR) and near-infrared (NIR) devices [12][13][14][15] and other fields.…”

Section: Introductionmentioning

confidence: 99%

Improving the quality and properties of GaInSb crystal with Al doping

Wang,

Liu,

Liu

et al. 2024

Phys. Scr.

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GaInSb crystal is a promising substrate material that can be used to prepare various high-performance devices. Ga0.86In0.14Sb and Al-doped Ga0.86In0.14Sb (Ga0.86In0.14Sb:Al) crystals were grown with the vertical Bridgman method (VB). The doping concentration of aluminum (Al) is 0.005 - 0.015 molar ratio. The effect of Al doping on the structure and properties of Ga0.86In0.14Sb crystal was studied. The results indicated that Al doping significantly reduced the segregation of indium (In) component in the crystal, with the radial segregation reaching a minimum of 0.051 mol%/mm and the axial segregation reaching a minimum of 0.067 mol%/mm. The doping of Al also improved the crystal quality (lattice structure integrity) of Ga0.86In0.14Sb. The passivation and compensation of Al on the intrinsic defects of Ga0.86In0.14 Sb crystal significantly inhibited the generation of dislocation, of which density decreased to 2.461 × 103 cm-2. The doping of Al as the equivalent electron element of gallium (Ga) and In not only made the carrier concentration increase to 1.848 × 1018 cm-3 but also made the carrier mobility increase to 1.982 × 103 cm2/(V·s), resulting in the resistivity decreasing to 1.261 × 10−3 Ω·cm.

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Effects of the Mushy Zone on the Temperature Field and the Flow Field During GaInSb Crystal Growth with the Traveling Heater Method

Wang,

Liu,

Xing

et al. 2024

JOM

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Crystalline growth and alloying of InxGa1−xSb films by electrodeposition onto liquid metal electrodes

Cited by 4 publications

References 34 publications

Recent progress in eutectic gallium indium (EGaIn): surface modification and applications

Recent progress in eutectic gallium indium (EGaIn): surface modification and applications

Improving the quality and properties of GaInSb crystal with Al doping

Effects of the Mushy Zone on the Temperature Field and the Flow Field During GaInSb Crystal Growth with the Traveling Heater Method

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