Crystalline InGaZnO quaternary nanowires with superlattice structure for high-performance thin-film transistors

Li, Fangzhou; Yip, Sen Po; Dong, Ruoting; Zhou, Ziyao; Lan, Changyong; Liang, Xiaoguang; Li, Dapan; Meng, You; Kang, Xiaolin; Ho, Johnny C.

doi:10.1007/s12274-019-2434-4

Cited by 20 publications

(26 citation statements)

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“…[ 56,57 ] The deposited low work function metal particles reduce free carriers and avoid the scattering effects, which in turn decreases the density of trap states. [ 5 ] In short, as low work function metal is deposited, SS of GaSb NWFETs decreases, while deposited with high work function metal, SS increases obviously.…”

Section: Resultsmentioning

confidence: 99%

“…of channel semiconductors. With a better crystallinity, InGaZnO nanowires (NWs)-, [5] β-Ga 2 O 3 nanosheets-, [6] and black phosphorus filmbased FETs [7] have shown the enhanced mobilities in the kinds of literature, owing to the decreased transport scattering. Meanwhile, with a designed crystal growth plane, the polarity, carrier effective mass, and surface scattering of InP NWs, [8] layered PtSe 2 , [9] and multilayer InSe [10] can be controlled, resulting in the higher mobilities of FETs.…”

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confidence: 99%

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Toward Unusual‐High Hole Mobility of p‐Channel Field‐Effect‐Transistors

Sun

Zhuang

Fan

et al. 2021

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The carrier mobility of the as-mentioned building block devices depends mainly on the device fabrication technology and the channel semiconductors. The fabrication technology is complex and each of the processes is crucial to the carrier mobility of the as-fabricated building block devices. For example, Park et al. pointed out that the peak electron mobility of graphene field-effect-transistors (FETs) can be improved up to four times by using a cleaner substrate during the device fabrication process. [4] On the other hand, the carrier mobility of the as-mentioned building block devices can be regulated by the crystallinity, growth plane, carrier effective mass, carrier concentration, etc. of channel semiconductors. With a better crystallinity, InGaZnO nanowires (NWs)-, [5] β-Ga 2 O 3 nanosheets-, [6] and black phosphorus filmbased FETs [7] have shown the enhanced mobilities in the kinds of literature, owing to the decreased transport scattering. Meanwhile, with a designed crystal growth plane, the polarity, carrier effective mass, and surface scattering of InP NWs, [8] layered PtSe 2 , [9] and multilayer InSe [10] can be controlled, resulting in the higher mobilities of FETs.

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Section: Resultsmentioning

confidence: 99%

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confidence: 99%

Toward Unusual‐High Hole Mobility of p‐Channel Field‐Effect‐Transistors

Sun

Zhuang

Fan

et al. 2021

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“…[45][46][47][48] Due to the generally wide bandgap, the metal oxide NWs show the high photo-sensitivity to UV region, [46,49] which could function as building blocks for photonic synaptic devices. [50] In these cases, the interaction of simultaneous light pulses with adsorbed and bulk oxygen in the surface depletion region play a key role in regulating the NW conductance, that is, the synaptic weight. [9,51] In a recent work, both volatile and non-volatile resistive switching have been achieved in Ag-contacted ZnO nanowire devices, mainly enabled by the atomic Ag diffusion along the NW (Figure 2f,g), which well emulate the ion migration dynamics in biological synapses.…”

Section: D Quantum Materials For Artificial Synapsesmentioning

confidence: 99%

Quantum Artificial Synapses

et al. 2021

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Neuromorphic in-memory computing systems, comprising artificial synapses and neurons, can overcome the energy inefficiency and throughput limitation of today's von Neumann computing architecture. Recently, powered by the unique properties of quantum materials, for example, high mobility, outstanding sensitivity, and strong quantum effect, researchers have built quantum artificial synapses to mimic the biological ones. These quantum electronic/photonic synapses can precisely define their conductance state (or synaptic weight) for emulating synaptic behaviors, which shows bionic performance unreachable by other conventional materials. In this review, the significant achievements in quantum artificial synapses are summarized. First, potential quantum materials used in artificial synapses are discussed with particular attention to quantum dots, nanowires, layered materials, and quasi-2DEG interfaces. Then, the major quantum effects that are utilized in quantum artificial synapses, for example, Josephson effect, quantum tunneling, and spin memory, are reviewed. In addition to the discussion on a single synaptic device, the macroscale integration into artificial visual systems and artificial nerve networks are also highlighted. Finally, the associated future research trends and target applications are also discussed.

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“…The details of the NW growth are provided in Materials and Methods. Briefly, by using one-step vapor-liquid-solid (VLS) growth process performed at ambient pressure ( 16 , 17 ), InGaO 3 (ZnO) 3 superlattice NWs with well-defined morphology and average diameter of ~25 nm are successfully synthesized as shown in Fig. 1A and fig.…”

Section: Introductionmentioning

confidence: 99%

Artificial visual systems enabled by quasi–two-dimensional electron gases in oxide superlattice nanowires

Meng

Lan

et al. 2020

Sci. Adv.

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Rapid development of artificial intelligence techniques ignites the emerging demand on accurate perception and understanding of optical signals from external environments via brain-like visual systems. Here, enabled by quasi–two-dimensional electron gases (quasi-2DEGs) in InGaO3(ZnO)3 superlattice nanowires (NWs), an artificial visual system was built to mimic the human ones. This system is based on an unreported device concept combining coexistence of oxygen adsorption-desorption kinetics on NW surface and strong carrier quantum-confinement effects in superlattice core, to resemble the biological Ca2+ ion flux and neurotransmitter release dynamics. Given outstanding mobility and sensitivity of superlattice NWs, an ultralow energy consumption down to subfemtojoule per synaptic event is realized in quasi-2DEG synapses, which rivals that of biological synapses and now available synapse-inspired electronics. A flexible quasi-2DEG artificial visual system is demonstrated to simultaneously perform high-performance light detection, brain-like information processing, nonvolatile charge retention, in situ multibit-level memory, orientation selectivity, and image memorizing.

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Crystalline InGaZnO quaternary nanowires with superlattice structure for high-performance thin-film transistors

Cited by 20 publications

References 54 publications

Toward Unusual‐High Hole Mobility of p‐Channel Field‐Effect‐Transistors

Toward Unusual‐High Hole Mobility of p‐Channel Field‐Effect‐Transistors

Quantum Artificial Synapses

Artificial visual systems enabled by quasi–two-dimensional electron gases in oxide superlattice nanowires

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