Crystalline perfection of high purity synthetic diamond crystal

Sumiya, Hitoshi; Toda, Naohiro; Nishibayashi, Yoshiki; Satoh, Shuichi

doi:10.1016/s0022-0248(96)00797-x

Cited by 125 publications

(58 citation statements)

References 17 publications

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“…Of more importance, the full width at half maximum (FWHM) of the diamond (220) diffraction peak shows no measurable changes after finishing the diffusion process. The small FWHM value of 0.025 degrees indicates the high single crystallinity of the diamond 22,23 . The Raman spectra of the nSCD before and after diffusion doping are shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

Thermal diffusion boron doping of single-crystal natural diamond

Seo

Mikael

et al. 2016

Journal of Applied Physics

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Abstract:With the best overall electronic and thermal properties, single crystal diamond (SCD) is the extreme wide bandgap material that is expected to revolutionize power electronics and radio-frequency electronics in the future. However, turning SCD into useful semiconductors requires overcoming doping challenges, as conventional substitutional doping techniques, such as thermal diffusion and ion implantation, are not easily applicable to SCD. Here we report a simple and easily accessible doping strategy demonstrating that electrically activated, substitutional doping in SCD without inducing graphitization transition or lattice damage can be readily realized with thermal diffusion at relatively low temperatures by using heavily doped Si nanomembranes as a unique dopant carrying medium. Atomistic simulations elucidate a vacancy exchange boron doping mechanism that occur at the bonded interface between Si and diamond.We further demonstrate selectively doped high voltage diodes and half-wave rectifier circuits using such doped SCD. Our new doping strategy has established a reachable path toward using SCDs for future high voltage power conversion systems and for other novel diamond based electronic devices. The novel doping mechanism may find its critical use in other wide bandgap semiconductors.With the advent of various new renewable energy sources and the emerging need to deliver and convert energy more efficiently, power electronics have received unprecedented attention in recent years. For the last several decades, Si-based power devices have played a dominant role in power conversion electronics. Wide bandgap semiconductor material based power electronics, such as those employing GaN and SiC, are expected to handle more power with higher efficiency than Si-based ones. GaN exhibits higher saturation velocity than Si. However, the thermal conductivity of GaN is low for power conversion systems. Moreover, it is currently difficult to obtain a thick and high quality GaN layer. SiC has its own native substrate, but it has inferior performance matrices (e.g., Johnson's figure of merit) versus GaN. In comparison, diamond exhibits most of the critical material properties for power electronics, except for its small substrate size at present. Diamond has a wide bandgap, high critical electric field, high carrier mobility, high carrier saturation velocities and the highest thermal conductivity among all available semiconductor materials [1][2][3] . Due to its superior electrical properties, the thickness of the highest quality diamond required to block an equivalent amount of voltage is approximately onefifth to one-fourth the thicknesses of GaN or SiC. In particular, the superior thermal conductivity of diamond could greatly simplify the design of heat dissipation and hence simplify entire power electronics modules. Therefore, diamond is considered the best material candidate for power electronics in terms of power switching efficiency, reliability, and system volume and weight.However, besides the lack of large ar...

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Section: Resultsmentioning

confidence: 99%

Thermal diffusion boron doping of single-crystal natural diamond

Seo

Mikael

et al. 2016

Journal of Applied Physics

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“…improving the crystalline quality of the synthetic type II a diamond crystals [5]. The largest size of the such 962 high quality diamond we obtained so far by this method is about 7 carats, 8-9 mm across.…”

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confidence: 83%

“…Our synthetic type IIa diamonds have very high crystalline quality, and the quality from crystal to crystal changes very little (Table 1, [5]). …”

Section: -3 Mechanical Propertiesmentioning

confidence: 99%

“…We have also shown that such high-purity synthetic diamond has high crystalline quality with fewer crystal defects, less internal strain, and less variation in defects among crystals than those of natural diamonds or synthetic type Ib diamond [5]. The high crystalline quality improves the mechanical and physical properties of the diamond [6,7].…”

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confidence: 99%

“…We evaluated the crystalline quality of our synthetic type IIa diamonds by double-crystal X-ray rockingcurve measurement, polarizing microscopy, X-ray topography, and Raman spectroscopy [5]. Table 1 summarizes the results of evaluations.…”

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See 2 more Smart Citations

High-Quality Synthetic Diamond Crystals.

Sumiya¹,

Satoh²,

Yazu

1998

THE REVIEW OF HIGH PRESSURE SCIENCE AND TECHNOLOGY

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High-quality synthetic type IIa diamond crystals of several carats, containing less than 0.1 ppm chemical impurities and few inclusions, have been successfully synthesized by the temperature gradient method under high pressure and high temperature. The crystals are transparent over a wide range of wavelengths from ultraviolet to far infrared regions, showing no absorptions due to impurities.They also have high crystalline quality with fewer crystal defects, less internal strain, and less variation in defects among crystals than those of natural diamonds or conventional synthetic type Ib diamond. The outstanding characteristics of the synthetic type IN diamond permit application to a considerably wide range of industrial and scientific uses such as optical parts, monochromators, high-pressure anvils, and so on.[synthetic diamond, high pressure, crystal growth, impurity, dislocation]

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Diamant: naturgewachsener Edelstein und maßgeschneidertes Material

Schwarz

2000

Chemie in unserer Zeit

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Die natürliche Diamantbildung auf der Erde und im extraterrestrischen Raum erfolgt unter Hochdruck-und Hochtemperaturbedingungen. Im technischen Maßstab werden Hochdruck-Hochtemperatur-Synthesen durchgeführt, mit denen Kristalle mit hervorragenden optischen Eigenschaften hergestellt werden können. Entstehung in den Zeitraum 320-296 v. Chr. datiert wird [3]. Exemplare der indischen Kristalle, die nicht als Schmucksteine verwendet werden konnten, gelangten über die damaligen Handelsbeziehungen auch ins Römische Reich. Dort verwendete man sie beispielsweise zur Herstellung von Gravierwerkzeugen [4].

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Crystalline perfection of high purity synthetic diamond crystal

Cited by 125 publications

References 17 publications

Thermal diffusion boron doping of single-crystal natural diamond

Thermal diffusion boron doping of single-crystal natural diamond

High-Quality Synthetic Diamond Crystals.

Diamant: naturgewachsener Edelstein und maßgeschneidertes Material

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