Crystalline Quality Evaluation of SiC p/n Column Layers Formed by Trench-Filling-Epitaxial Growth

Abstract

We evaluated crystalline quality of SiC p/n column layers over 20 μm thickness formed by trench-filling-epitaxial growth. Although threading dislocation density of trench-filling-epitaxial layer is almost same as flat n-type epitaxial layer, threading dislocations are localized in only trench-filled p-columns. We consider that threading dislocations migrated toward p-columns around trench bottom during trench-filling-epitaxial growth.