Crystalline Silicon Solar Cells and Modules

Rubin, L. B.

doi:10.1002/9780470636886.ch5

Cited by 6 publications

(2 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Also, large-area growth is far easier for polycrystalline diamond, with the upper limit for polycrystalline diamond being fixed at around 100 mm by the physical properties of a microwave growth plasma [41], whereas single crystals still tend only to be found in sizes of a few square millimetres. Development in this area for detectors may facilitate polycrystalline diamond gammavoltaic cells in future, in a manner analogous to how polycrystalline solar cells offer a cheaper, if less efficient, alternative to those which are monocrystalline [42].…”

Section: Introductionmentioning

confidence: 99%

A diamond gammavoltaic cell utilizing surface conductivity and its response to different photon interaction mechanisms

Mackenzie

Kaluvan

Martin

et al. 2021

Materials Today Energy

View full text Add to dashboard Cite

Section: Introductionmentioning

confidence: 99%

A diamond gammavoltaic cell utilizing surface conductivity and its response to different photon interaction mechanisms

Mackenzie

Kaluvan

Martin

et al. 2021

Materials Today Energy

View full text Add to dashboard Cite

“…2 In addition, reducing the thickness can further increase the cell efficiency, which is generally achieved by enhancing the open circuit voltage (Voc). 3,4 Recently, a 98-μm-thick and 24.7% efficient heterojunction Si (HJS) solar cell, with a Voc of 750 mV, was developed by Panasonic. 5 Using a thin Si substrate obtained by applying a kerfless process, which can potentially reduce the cost of solar cells, has become a major topic recently.…”

mentioning

confidence: 99%

Fabricating 43-μm-Thick and 12% Efficient Heterojunction Silicon Solar Cells by Using Kerfless Si(111) Substrates

Chen

Wang

et al. 2015

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

A 43-μm-thick Si(111) substrate was obtained using the stress-induced lift-off method with a screen-printed metal paste layer as the stress-generation layer. The reflection of the metal-removed side of the Si(111) substrate was lower than that of the exfoliated side because of high surface roughness resulting from the reaction between the metal paste and the silicon substrate at 700 • C. After aggressive etching with an alkaline solution for the peeled silicon substrate, the efficiency of the heterojunction silicon solar cell was improved from 0.87% to 12%. For decades, silicon (Si)-based solar cells have been the conventionally used products in the photovoltaic (PV) industry. The Si solar cell module price is lower than 0.75 USD/W, which could be mainly attributed to the extensive research on and development of these cells and support from local governments.1 Although the price of poly-Si decreased markedly from 450 USD/kg in 2008 to 20 USD/kg in 2015, the price of poly-Si accounts for more than 50% of the cost of a Si solar cell.2 Thus, reducing the use of Si is the most effective method for reducing the cost of a Si solar cell. Therefore, the thickness of a Si substrate will be reduced from 200 μm in 2010 to 120 μm in 2020.2 In addition, reducing the thickness can further increase the cell efficiency, which is generally achieved by enhancing the open circuit voltage (Voc).3,4 Recently, a 98-μm-thick and 24.7% efficient heterojunction Si (HJS) solar cell, with a Voc of 750 mV, was developed by Panasonic. 5Using a thin Si substrate obtained by applying a kerfless process, which can potentially reduce the cost of solar cells, has become a major topic recently.6-11 Kuzma-Filipek et al. used a 30-μm-thick epitaxial Si film grown on a highly doped P + -Si substrate with a porous multilayer structure to obtain a 16.2% efficient Si solar cell. 6 Petermann et al. used a 43-μm-thick and freestanding epitaxial Si film by using the layer transfer technique to obtain a 19% efficient Si solar cell.7 High-efficiency solar cells can be fabricated using these thin epitaxial Si substrates; however, the high-temperature fabrication process (>1000• C) and expensive epitaxy system increase the cost. The stress-induced lift-off method, which is based on the thermal expansion difference between a deposited metal film and a Si substrate, could be an alternative because it entails a simple, low-temperature (<900• C) process for obtaining a thin Si substrate. 8,12,13 Dross et al. compared the differences between Si(111) and Si(100) substrates after exfoliation and obtained a 50-μm-thick and 10% efficient Si solar cell.9 Saha et al. further alleviated the difficulty of handling thin Si substrates and obtained a 25-μm-thick and 14.9% efficient Si solar cell. 10 We recently reported the thermal stress-induced pattern transfer technique, which is a combination of the thin-film deposition process and the layer transfer technique, and obtained a 3-μm-thick Si film with a textured surface. The short-circuit current of the HJS solar cell fabr...

show abstract

Process modeling for doped regions formation on high efficiency crystalline silicon solar cells

et al. 2013

View full text Add to dashboard Cite

Crystalline Silicon Solar Cells and Modules

Cited by 6 publications

References 7 publications

A diamond gammavoltaic cell utilizing surface conductivity and its response to different photon interaction mechanisms

A diamond gammavoltaic cell utilizing surface conductivity and its response to different photon interaction mechanisms

Fabricating 43-μm-Thick and 12% Efficient Heterojunction Silicon Solar Cells by Using Kerfless Si(111) Substrates

Process modeling for doped regions formation on high efficiency crystalline silicon solar cells

Contact Info

Product

Resources

About