Crystalline Silicon Solar Cells

Green, Martin A.

doi:10.1142/9781848167681_0003

Cited by 5 publications

(2 citation statements)

References 67 publications

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“…Since the bandgap difference of ∼0.1 eV at the bandgap of ∼1.5 eV should ideally lead to a J sc difference of ∼4 mA cm − 2 (ref. 31 ), the observed substantially lower J sc value indicates inadequate light absorption, which is attributable to the thin absorber layer. Although PS absorbs light strongly, its absorption at the long wavelength range near the absorption edge (∼800 nm) is less ideal.…”

Section: Discussionmentioning

confidence: 94%

Carrier separation and transport in perovskite solar cells studied by nanometre-scale profiling of electrical potential

et al. 2015

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Organometal–halide perovskite solar cells have greatly improved in just a few years to a power conversion efficiency exceeding 20%. This technology shows unprecedented promise for terawatt-scale deployment of solar energy because of its low-cost, solution-based processing and earth-abundant materials. We have studied charge separation and transport in perovskite solar cells—which are the fundamental mechanisms of device operation and critical factors for power output—by determining the junction structure across the device using the nanoelectrical characterization technique of Kelvin probe force microscopy. The distribution of electrical potential across both planar and porous devices demonstrates p–n junction structure at the TiO2/perovskite interfaces and minority-carrier diffusion/drift operation of the devices, rather than the operation mechanism of either an excitonic cell or a p-i-n structure. Combining the potential profiling results with solar cell performance parameters measured on optimized and thickened devices, we find that carrier mobility is a main factor that needs to be improved for further gains in efficiency of the perovskite solar cells.

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Section: Discussionmentioning

confidence: 94%

Carrier separation and transport in perovskite solar cells studied by nanometre-scale profiling of electrical potential

et al. 2015

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“…[12][13][14] The core structure of c-Si solar cells is a pn-homojunction by diffusing n (or p)-type emitter on p (or n)-type silicon substrate. [15] In c-Si solar cells, this pn-homojunction is still used today and can achieve high power conversion efficiency (PCE) of ≈25% by the well-known passivated emitter and rear cell and related architectures, such as passivated emitter locally diffused and passivated emitter rear totally diffused cells. [16][17][18] Unlike c-Si solar cells, the CIGS solar cell device is based on a pn-heterojunction which formed between p-type CIGS and n-type CdS layer.…”

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confidence: 99%

Implementation of Tunneling Junction Passivated Contact Concept in Flexible CIGS Solar Cells

Chang

Chen

et al. 2022

Adv Materials Inter

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In today's state‐of‐the‐art high‐efficiency silicon solar cells need to be inserted a thin insulating layer in order to reduce the recombination losses between the carrier transport layer and Si surface, which can form a tunneling junction (TJ), thus increasing the performance of the TJ solar cells comparable with the pn junction structure. However, the copper indium gallium selenium (CIGS) solar cells inevitably lead to the losses of the carrier transport due to the interface which is widely assumed as the pn‐heterojunction. Herein, the TJ solar cells, aiming to enhance the performance of the solar cells, are fabricated by inserting the TiO2 between CIGS/CdS interface deposited by atomic layer deposition (ALD). By inserting the TiO2 insulating layer, the CIGS/TiO2/CdS structure can be effectively reduced the interface recombination, which leads to a reduced band bending in the p‐CIGS surface and compromises its field‐effect passivation. As a result, the CIGS solar cell with the tunneling junction achieves the 15.57% based on the stainless steel (SS) substrate, by introducing a barrier layer and doping NaF. These results provide an important preliminary foundation for the development of the CIGS solar cells with the tunneling junction structure.

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Plasmonic TiO2/Al@ZnO nanocomposite-based novel dye-sensitized solar cell with 11.4% power conversion efficiency

Pugazhendhi¹,

Praveen²,

Mary³

et al. 2021

Solar Energy

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Crystalline Silicon Solar Cells

Cited by 5 publications

References 67 publications

Carrier separation and transport in perovskite solar cells studied by nanometre-scale profiling of electrical potential

Carrier separation and transport in perovskite solar cells studied by nanometre-scale profiling of electrical potential

Implementation of Tunneling Junction Passivated Contact Concept in Flexible CIGS Solar Cells

Plasmonic TiO2/Al@ZnO nanocomposite-based novel dye-sensitized solar cell with 11.4% power conversion efficiency

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