Crystalline Structure, Surface Morphology and Optical Properties of Nanolamellar Composites Obtained by Intercalation of InSe with Cd

Untilă, Dumitru; Caraman, Iuliana; Evtodiev, Igor; Cantser, V.; Spalatu, Nicolae; Leontie, Liviu; Dmitroglo, Liliana; Luchian, E.

doi:10.1016/j.egypro.2015.12.308

Cited by 2 publications

(2 citation statements)

References 27 publications

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“…The thermal annealing (TA) of gallium and indium monochalcogenides in normal atmosphere, or in oxygen‐enriched atmosphere, leads to the formation of their crystalline micro and nanocomposites with In 2 O 3 and Ga 2 O 3 oxides . As we demonstrated in our previous works, crystalline composites consisting of A II B VI and A III B VI semiconductors, with physical properties characteristic for these compounds, can be obtained by TA of the A III B VI (GaS, GaSe, GaTe and InSe) and

{normalA}_{2}^{III} {normalB}_{3}^{VI}

semiconductors (e.g., Ga 2 S 3 ) in Cd and Zn vapours …”

Section: Introductionmentioning

confidence: 87%

Optical and Photoelectric Properties of Nanolamellar Structures Obtained by Thermal Annealing of InSe Plates in Zn Vapours

Untilă

Evtodiev

Caraman

et al. 2018

Physica Status Solidi (a)

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The structural, optical and photoelectric properties of InSe crystals grown by Bridgman-Stockbarger method and ZnSe/InSe structures obtained on InSe by thermal annealing in Zn vapours are studied in this paper. The study of structural properties confirms that ZnSe compound is formed. The analysis of photoelectric properties reveal that both the ZnSe-InSe composite layer and the composite/InSe heterojunction are photosensitive in the VIS-NIR spectral region.

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{normalA}_{2}^{III} {normalB}_{3}^{VI}

semiconductors (e.g., Ga 2 S 3 ) in Cd and Zn vapours …”

Section: Introductionmentioning

confidence: 87%

Optical and Photoelectric Properties of Nanolamellar Structures Obtained by Thermal Annealing of InSe Plates in Zn Vapours

Untilă

Evtodiev

Caraman

et al. 2018

Physica Status Solidi (a)

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“…Its single crystals are composed of layered atomic packings of Te–Ga–Ga–Te type with strong bonds of ionic‐covalent type inside packings and weak van der Waals polarization bonds between them . Packings are so disposed to one another that cracks are formed between them, in which atoms and molecules can easily intercalate . The van der Waals planes are free of dangling bonds and prove to be very inert to chemical reactions .…”

Section: Introductionmentioning

confidence: 99%

Photoelectric and photoluminescence properties of CdTe–GaTe composite

Caraman

Spalatu

Evtodiev

et al. 2016

Physica Status Solidi (b)

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A GaTe-CdTe composite was obtained by thermal treatment at 1020 K of GaTe single crystals in Cd vapor atmosphere. The composite photoluminescence, photoconductivity, and composition are studied in this work. The photosensitivity and photoluminescence band structure are determined for both the primary crystals and the composite. The CdTe crystallites create, in the GaTe bandgap, recombination and trapping levels, which determine the structure of the photoluminescence spectra and the spectral range of composite photosensitivity. The photoluminescence spectrum of the composite at 80 K contains characteristic bands of both composite components, GaTe and CdTe. From the analysis of thermally stimulated luminescence curves, the energies of the electron trapping levels in the composite are determined.

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Crystalline Structure, Surface Morphology and Optical Properties of Nanolamellar Composites Obtained by Intercalation of InSe with Cd

Cited by 2 publications

References 27 publications

Optical and Photoelectric Properties of Nanolamellar Structures Obtained by Thermal Annealing of InSe Plates in Zn Vapours

Optical and Photoelectric Properties of Nanolamellar Structures Obtained by Thermal Annealing of InSe Plates in Zn Vapours

Photoelectric and photoluminescence properties of CdTe–GaTe composite

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