Electrodeposition has been regarded
as a promising way to fabricate
Cu2ZnSnSe4 (CZTSe) absorber layers because of
the environmental friendliness and low-cost energy consumption. However,
the electrodeposited copper (Cu) always forms “dendritic-like”
clusters, which greatly influences the morphology of the CZTSe absorber
layer and the efficiency of CZTSe solar cells. In this work, a uniform
Cu thin film obtained through predepositing a thin Cu–Ge contacting
layer on the molybdenum (Mo) substrate induces homogeneous electrodeposition
of the Cu layer. Then, high-quality CZTSe films with low surface roughness
(R
a) are successfully fabricated. The
difference between the activation energy (E
a) and band gap (E
g) has decreased from
0.21 to 0.09 eV, which means that the additional recombination process
has reduced. The V
oc-deficit also decreases by about 42 mV. Consequently, the efficiency of the
device increased from 6.75 to 9.54% after introducing the contacting
layer. This study suggests that a functional Cu–Ge contacting
layer is important to form a high-quality CZTSe thin film, which provides
a solid reference for the preparation of CZTSe thin films or/and other
available semiconductor thin films via the electrodeposition method.