Crystallization behavior of electron-beam-evaporated amorphous silicon films on textured glass substrates by flash lamp annealing

Yago, Aimi; Ohdaira, Keisuke

doi:10.1016/j.tsf.2021.138681

Cited by 2 publications

(3 citation statements)

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“…We previously found that EBevaporated a-Si films on glass substrates textured by RIE can be crystallized through EC. 21,22) Similar crystallization and anchor effect can also be seen when a Si nitride (SiN x ) film is inserted between a-Si and textured glass, which will act as a passivation and anti-reflection (AR) film for the back-contact cell. 22) In this study, we attempted to crystallize Cat-CVD a-Si:H films by FLA on SiN x -coated textured glass substrates.…”

Section: Introductionmentioning

confidence: 91%

“…21,22) Similar crystallization and anchor effect can also be seen when a Si nitride (SiN x ) film is inserted between a-Si and textured glass, which will act as a passivation and anti-reflection (AR) film for the back-contact cell. 22) In this study, we attempted to crystallize Cat-CVD a-Si:H films by FLA on SiN x -coated textured glass substrates. We particularly used n-type a-Si:H films as precursors aiming at the clarification of the effect of phosphorous (P) addition to a-Si:H on their crystallization, because doped absorber layers should be used in the actual thin-film poly-Si solar cells.…”

Section: Introductionmentioning

confidence: 91%

“…14) We have attempted to use precursor a-Si films formed by various types of deposition methods, such as catalytic chemical vapor deposition (Cat-CVD), sputtering, and electron-beam (EB) evaporation. [15][16][17][18][19][20][21][22][23][24] The crystallization of EBevaporated a-Si films on flat glass substrates is driven by liquid-phase explosive crystallization (EC), which leads to the formation of crystal grains with a size of several tens of μm. 17) A different type of EC occurs for the crystallization of Cat-CVD a-Si:H films, through which two types of regions with different microstructures appear alternately in the direction of crystallization with a period of ∼1 μm.…”

Section: Introductionmentioning

confidence: 99%

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Crystallization of catalytic CVD hydrogenated n-a-Si films on textured glass substrates by flash lamp annealing

Wang

Ohdaira

2022

Jpn. J. Appl. Phys.

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Flash lamp annealing (FLA) is a short-duration annealing technique that can crystallize amorphous silicon (a-Si) films for thin-film polycrystalline Si (poly-Si) solar cells. We investigated the crystallization of n-type hydrogenated a-Si (n-a-Si:H) films formed by catalytic chemical vapor deposition on Si nitride- (SiN x -) coated textured glass substrates. The n-a-Si:H films with a thickness of ∼2.7 μm were crystallized by FLA with no film peeling even without chromium adhesion layers. We also confirmed that the crystallization takes place through explosive crystallization (EC). The addition of phosphorous to the precursor a-Si:H slightly modifies the crystallization, resulting in different grain sizes and EC velocities compared to the case of EC of intrinsic a-Si:H.

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Section: Introductionmentioning

confidence: 91%

Section: Introductionmentioning

confidence: 91%

Section: Introductionmentioning

confidence: 99%

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Crystallization of catalytic CVD hydrogenated n-a-Si films on textured glass substrates by flash lamp annealing

Wang

Ohdaira

2022

Jpn. J. Appl. Phys.

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Formation of n-type polycrystalline silicon with controlled doping concentration by flash lamp annealing of catalytic CVD amorphous silicon films

Wang,

Tu,

Ohdaira

2024

Jpn. J. Appl. Phys.

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We investigated the properties of polycrystalline silicon (poly-Si) films formed by the flash lamp annealing (FLA) of hydrogenated amorphous Si (a-Si:H) films. Phosphorus- (P-) doped a-Si films with a thickness of several micrometers deposited by catalytic chemical vapor deposition (Cat-CVD) on a silicon nitride- (SiNx-) coated textured glass substrate are crystallized films by FLA. P doping was achieved by flowing phosphine (PH3) during Cat-CVD, and the P concentration was controlled within a range of 1016–1021 cm−3, which was measured by secondary ion mass spectrometry (SIMS). We also fabricated simple back-contact Si heterojunction solar cells to estimate a potential of flash-lamp-crystallized (FLC) poly-Si as an absorption layer. The current-density–voltage (J–V) characteristics of the cells measured under 1 sun light irradiation show an open-circuit voltage (VOC) of > 0.4 V. This indicates that the FLC poly-Si films may be used like other poly-Si films in solar cell devices.

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Crystallization behavior of electron-beam-evaporated amorphous silicon films on textured glass substrates by flash lamp annealing

Cited by 2 publications

References 31 publications

Crystallization of catalytic CVD hydrogenated n-a-Si films on textured glass substrates by flash lamp annealing

Crystallization of catalytic CVD hydrogenated n-a-Si films on textured glass substrates by flash lamp annealing

Formation of n-type polycrystalline silicon with controlled doping concentration by flash lamp annealing of catalytic CVD amorphous silicon films

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