Crystallization Characteristics of LaNiO₃ Layers and Their Effect on Pulsed Laser Deposited (Pb _1-xLa_x)(Zr_yTi _1-y)O ₃ Thin Films

Abstract

Based on the invariance of differential equations under infinitesimal transformations of group, Lie symmetries, exact invariants, perturbation to the symmetries and adiabatic invariants in form of non-Noether for a Lagrange system are presented. Firstly, the exact invariants of generalized Hojman type led directly by Lie symmetries for a Lagrange system without perturbations are given. Then, on the basis of the concepts of Lie symmetries and higher order adiabatic invariants of a mechanical system, the perturbation of Lie symmetries for the system with the action of small disturbance is investigated, the adiabatic invariants of generalized Hojman type for the system are directly obtained, the conditions for existence of the adiabatic invariants and their forms are proved. Finally an example is presented to illustrate these results.

Orientation Control Growth of Lanthanum Nickelate Thin Films Using Chemical Solution Deposition

“…This result explained some reports on the preparation of LNO films. In some early experiments, the CSD method with traditional furnaces always resulted in (110)‐oriented LNO films, 4 while using rapid thermal processors often led to a (100) orientation 8,12 . The heating rate is the key difference and the reason for these results of traditional furnaces and rapid thermal processors.…”

“…The preparation of LNO films on the Si substrate has been carried out by a variety of methods. Usually, RF magnetron sputtering methods lead to (100)‐oriented LNO films, 7 and PLD methods often result in (110)‐oriented LNO films, 8 while the chemical solution deposition (CSD) methods can yield both (100)‐ and (110)‐oriented LNO films by changing the concentration or solvent of the precursor solution 9,10 . In this letter, we successfully controlled the orientation growth of LNO films by changing the annealing parameters of a simple CSD method, and the orientation mechanism is discussed.…”

Development of buffer layer structure for epitaxial growth of (100)/(001)Pb(Zr,Ti)O3-based thin film on (111)Si wafer

“…The optimal pressure was about 10 Pa, and other pressure conditions provided no or weak (100) orientation in this study. Tseng and coworkers reported on the difficulty of realizing the preferential (100) orientation on Pt by PLD 32,33) because the (110) plane is normally favorable for lowering the surface energy of the films. The main key to our success may have been the high-temperature deposition at, for example, 800 °C.…”

Chemical Solution Deposition of Columnar‐Grained Metallic Lanthanum Nitrate Thin Films

“…1,2 Recently, LNO thin films have attracted great attention because of their promising application as bottom electrodes in the fabrication of ferroelectric memories and other devices. [3][4][5][6][7][8] It has the same type of perovskite structure as that of most ferroelectric films, with little lattice mismatch. Therefore, a good crystallographic compatibility between the LNO layer and the ferroelectric films can be achieved.…”