Crystallization improvement of Ta2O5 thin films by the addition of water vapor

Effect of water vapor on the transformation of VOHPO4·0.5H2O into (VO)2P2O7

“…mixture of argon and water vapor, rather than using only argon as is usual in the crystallization of ZnO. Huang and Chu [21] reported that the temperature required for the crystallization of amorphous tantalum oxide to Ta 2 O 5 decreases with the introduction of water vapor into the treatment gas. Matsukata and Prasad Rao [22] developed a unique synthetic method for the production of zeolites, called dry gel conversion, in which an aluminosilicate gel, which has been dried in advance, is rapidly crystallized to the zeolite phase in a water vapor environment.…”

Heat treatment induced structural and optical properties of rf magnetron sputtered tantalum oxide films

“…In the case of the films deposited at room temperature and annealed by either rapid thermal annealing or conventional annealing the crystallinity sets in only above 973 K [4]. Huang and Chu obtained amorphous films at substrate temperature of 773 K, while the addition of water vapor during the rf sputtering leads to crystalline films [14]. Dimitrova et al observed amorphous to crystalline phase transition when annealed at temperatures between 873 K and 1123 K in rf magnetron sputtered films [15].…”

Particular structural defects in Ta2O5 from crystallisation of amorphous thin films in O2–H2O atmosphere

“…On account of the result of Huang and Chu [26] showing that the crystallisation of an amorphous layer obtained by Table 1. 2h positions and ratios of integrated intensities between the large Gaussian peak and the sum of both Gaussian peaks for samples crystallised in different conditions.…”

“…The structure of the Ta 2 O 5 thin film obtained by Huang and Chu[26] is however tetragonal but not monoclinic.M. Le Gallic et al / Acta Materialia 94 (2015) 181-192…”