Crystallization kinetics of sputter-deposited amorphous AgInSbTe films

Njoroge, Walter Kamande; Wuttig, Matthias

doi:10.1063/1.1405141

Cited by 73 publications

(46 citation statements)

References 18 publications

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“…A broad hump at the 2θ angle of 26 • in the XRD was found, and no sharp peaks appeared in the as-deposited film, indicating that the as-deposited AgInSbTe film was in the amorphous state. This result is consistent with the results from a previous study [19]. After laser irradiation, a diffraction peak appeared at 28.82 • , which gradually became stronger with the increase in laser power density, suggesting that a phase change from the amorphous to the crystalline state had occurred in the laser-irradiated region [14], …”

Section: Surface Morphology and Structure Of The Aginsbte Films Beforsupporting

confidence: 82%

Selective etching characteristics of the AgInSbTe phase-change film in laser thermal lithography

Geng

2012

Appl. Phys. A

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In the current work, the etching selectivity of the AgInSbTe phase-change film in laser thermal lithography is reported for the first time. Film phase change induced by laser irradiation and etching selectivity to crystalline and amorphous states in different etchants, including hydrochloric acid, sulfuric acid, phosphoric acid, nitric acid, sodium hydroxide, sodium sulfide, ammonium sulfide and ammonium hydroxide, are investigated. The results indicated that ammonium sulfide solvent (2.5 mol/L) had excellent etching selectivity to crystalline and amorphous states of the AgInSbTe film, and the etching characteristics were strongly influenced by the laser power density and laser irradiation time. The etching rate of the crystalline state of the AgInS- bTe film was 40.4 nm/min, 20 times higher than that of the amorphous state under optimized irradiation conditions (power density: 6.63 mW/μm 2 and irradiation time: 330 ns), with ammonium sulfide solvent (2.5 mol/L) as etchant. The step profile produced in the selective etching was clear, and smooth surfaces remained both on the step-up and stepdown with a roughness of less than 4 nm (10 × 10 μm). The excellent performance of the AgInSbTe phase-change film in selective etching is significant for fabrication of nanostructures with super-resolution in laser thermal lithography.

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Section: Surface Morphology and Structure Of The Aginsbte Films Beforsupporting

confidence: 82%

Selective etching characteristics of the AgInSbTe phase-change film in laser thermal lithography

Geng

2012

Appl. Phys. A

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“…13,17 It also explains why the use of the Kissinger method for determining the kinetic parameters of crystallization in phase-change media is appropriate in thermal annealing experiments adopted by many workers. 6,15,16,29 The transition temperature is identified as the temperature of maximum crystallization rate 12 at which ‫ץ‬ 2 / ‫ץ‬t 2 =0. Thus, differentiating ͑21͒ with respect to time and assuming that A does not change significantly near the maximum, 13 leads to the following condition at the transition temperature:…”

Section: Small Heating Ratesmentioning

confidence: 99%

“…It can also be determined as the point of optimum slope in resistivity versus temperature measurement curves. 6,15,16 Moreover, this transition temperature is strongly correlated with the kinetics of the crystallization process that may be described by the Johnson-Mehl-Avrami-Kolmogrov ͑JMAK͒ equation. 12,13,17 The remaining sections of this paper are dedicated to deriving each term of the slope equation in ͑1͒ to arrive at an analytical expression for the length of the amorphous to crystalline transition region in phase-change media.…”

Section: Introductionmentioning

confidence: 99%

A slope-theory approach to electrical probe recording on phase-change media

Aziz

Wright

2005

Journal of Applied Physics

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A theoretical approach to predicting the spatial extent of the amorphous to crystalline transition region during the probe recording process on phase-change storage media is presented. The extent of this transition region determines the ultimate achievable linear density for data storage using phase-change materials. The approach has parallels with the slope theory used to find magnetic transition lengths in magnetic recording, and shows that the amorphous to crystalline transition length can be minimized by reducing the thickness of the phase-change layer, by minimizing lateral heat flow, and by maximizing the ratio of the activation energy for crystallization to the transition temperature E c / T t .

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“…7,8 In comparison with the classical GeSbTe phase change memory alloy, AgVInSbTe is reported to have better erasability and cyclablity in memory switching . 7,8,9,10 The phase changes in these materials are temperature driven, and the previous studies focus mainly on doped thin films of AgSbTe 2 . To our knowledge, no detailed structural reports are available for the host compound AgSbTe 2 , under different temperature or pressure conditions.…”

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confidence: 99%

Pressure induced structural phase transition inAgSbTe2

et al. 2005

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We report a novel high pressure structural sequence for the functionally graded thermoelectric, narrow band gap semiconductor AgSbTe2, using angle dispersive x-ray diffraction in a diamond anvil cell with synchrotron radiation at room temperature. The compound undergoes a B1 to B2 transition; the transition proceeds through an intermediate amorphous phase found between 17-26 GPa that is quenchable down to ambient conditions. The pressure induced structural transition observed in this compound is the first of its type reported in this ternary cubic family, and it is new for the B1-B2 transition pathway reported to date. Density Functional Theory (DFT) calculations performed for the B1 and B2 phases are in good agreement with the experimental results.PACS numbers: 61.43.Dq, 61.5. Ks, 61.10.Nz, 71.15.Mb Ternary semiconductors with a general formula ABX 2 (A= Cu,Ag ; B=In,Ga,Sb; X= S,Se,Te) with chalcopyrite or rock salt structure are widely used for important technical and device applications. These compounds are found to be excellent candidates for the fabrication of optical frequency converters in solid state laser systems, photovoltaic devices and development of solar cells.1,2,3 While the Cu based chalcopyrites are mainly studied in connection with their photovoltaic applications, the Ag compounds find importance in thermoelectric, optical phase change and frequency conversion applications.4,5 Cubic AgSbTe 2 compounds with Pb doping have been recently shown to be excellent thermoelectric materials with high figures of merit, and are considered promising candidates for future energy production from heat sources.6 AgSbTe 2 with In and V doping undergo, rapid crystalline -amorphous phase transitions on local melting; a property that is used widely to write and rewrite Compact Disks (CD) and Digital Versatile Disks (DVD). 7,8 In comparison with the classical GeSbTe phase change memory alloy, AgVInSbTe is reported to have better erasability and cyclablity in memory switching . 7,8,9,10 The phase changes in these materials are temperature driven, and the previous studies focus mainly on doped thin films of AgSbTe 2 . To our knowledge, no detailed structural reports are available for the host compound AgSbTe 2 , under different temperature or pressure conditions. AgSbTe 2 is isostructural to the rocksalt type II-VI chalcogenides. As the rock salt structure of most of the II-VI compounds is sensitive to pressure, changing from B1 to B2, 11,12 one may expect AgSbTe 2 to display a similar crystallographic transition under pressure. The aim of the present study is to investigate AgSbTe 2 under pressure to explore the structural similarities with its binary analogues. In this paper, we present experimental evidence, for the first time, of a pressure induced structural transition from B1 (crystalline) to B2 (crystalline) with an intermediate amorphous state. This is a new pathway for this structural sequence and is unique in the ABX 2 family. This finding may open up new directions in the search for similar compounds of ...

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Crystallization kinetics of sputter-deposited amorphous AgInSbTe films

Cited by 73 publications

References 18 publications

Selective etching characteristics of the AgInSbTe phase-change film in laser thermal lithography

Selective etching characteristics of the AgInSbTe phase-change film in laser thermal lithography

A slope-theory approach to electrical probe recording on phase-change media

Pressure induced structural phase transition inAgSbTe2

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