Crystallization mechanisms and recording characteristics of Si/CuSi bilayer for write-once blu-ray disc

Abstract

The crystallization mechanisms of Si/CuSi bilayer and its recording characteristics for write-once blu-ray disc (BD-R) were investigated. It was found that Cu3Si phase appeared during the room temperature sputtered deposition. Then, the Si atoms in CuSi layer segregated and crystallized to cubic Si in Cu3Si nucleation sites as the film was annealed at 270 °C. After heating to 500 °C, the grains size of cubic Si phase grew and the hexagonal Si phase was observed. The dynamic tests show that the Si/CuSi bilayer has great feasibility for 1-4× BD-R with the bottom jitter values below 6.5%.

Growth kinetics and interface structure of copper silicides studied by atom probe tomography

“…Particularly in Ref. [15] and [17], also Cu 3 Si is reported to form at room temperature. After a brief (5-10 min) annealing at 438 K, we found the described asymmetry to be even more pronounced (see Fig.…”

Ge/NiGe bilayer applied for the recording film of write-once blu-ray disc

“…It can be found that the GeCu layers had high optical contrast (at a wavelength of 405 nm), revealing that these films possess promising potential for blue laser recording media. Recently, Si/metal-silicide films including Si/CuSi [13] and Si/NiSi [14] have been presented in our previous works, employed as the recording layers of BD-R. The results reveal that better disc performance can be obtained in the Si/metal-silicide BD-R.…”

Thermal, Optical, and Microstructural Properties of Magnetron Sputter-Deposited CuSi Films for Application in Write-Once Blu-Ray Discs

“…Except for the metal/a-Si recording films, the other layer structure of the recording film applied for the BD-R was proposed in our previous research, i.e., the metal-silicide/a-Si bilayer films [11,12]. In 2011 and 2014, we presented the Si/CuSi and Si/NiSi bilayer recording films of BD-Rs, respectively [11,12].…”