Crystallization of amorphous Ge2Sb2Te5 films induced by an ultraviolet laser

Zhou, Weiping; Liu, F.R.; Bai, Naisheng; Wan, Ying; Lin, Xin; Chen, J.M.

doi:10.1016/j.apsusc.2013.07.082

Cited by 22 publications

(10 citation statements)

References 22 publications

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“…However, when the laser energy further increases to 28000 mJ/cm 2 , the diffraction peaks become weaker gradually. This phenomenon is similar to other reports15 and can be explained that the thin film is excessively ablated after the laser irradiation and then transformed back to an amorphous state due to high laser energy density.…”

Section: Resultssupporting

confidence: 91%

“…The peak ‘C’ at 137 cm −1 may be attributed to the segregation of Te crystalline phase for over-irradiation14. The peak ‘D’ at 160 cm −1 can be ascribed to the A 1g (2) vibration of crystalline Sb 2 Te 3 15.…”

Section: Resultsmentioning

confidence: 98%

“…20, in which the Raman peak is located at 120 cm −1 and assigned to A 1 symmetry of corner-sharing GeTe 4−n Ge n (n = 0,1, 2, 3) tetrahedral units14152122. The difference may be caused by the vibration of heteropolar bonds in GeTe 4 or GeTe 3 Ge15. The peak ‘C’ at 137 cm −1 may be attributed to the segregation of Te crystalline phase for over-irradiation14.…”

Section: Resultsmentioning

confidence: 99%

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Grayscale image recording on Ge2Sb2Te5 thin films through laser-induced structural evolution

Wei

Zhang

et al. 2017

Sci Rep

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Chalcogenide Ge2Sb2Te5 thin films have been widely exploited as binary bit recording materials in optical and non-volatile electronic information storage, where the crystalline and amorphous states are marked as the information bits “0” and “1”, respectively. In this work, we demonstrate the use of Ge2Sb2Te5 thin films as multi-level grayscale image recording materials. High-resolution grayscale images are recorded on Ge2Sb2Te5 thin films through taking advantage of laser-induced structural evolution characteristic. Experimental results indicate that the change of laser energy results in the structural evolution of Ge2Sb2Te5 thin films. The structural evolution induces the difference of electronic polarizability and reflectivity, and high-resolution grayscale images are recorded on Ge2Sb2Te5 thin films through direct laser writing method, accordingly.

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Section: Resultssupporting

confidence: 91%

Section: Resultsmentioning

confidence: 98%

Section: Resultsmentioning

confidence: 99%

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Grayscale image recording on Ge2Sb2Te5 thin films through laser-induced structural evolution

Wei

Zhang

et al. 2017

Sci Rep

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“…It is worth to mention that while the latter observation is typical for the process of GST225 crystallization [14,15], the first one seems unusual from the viewpoint of generally accepted increase in Ge 2 Sb 2 Te 5 density during crystallization [16][17][18]. In comparison with the crystalline area, smoother surface and non-crystalline structure of the central dark spot suggest melting and rapid cooling of material in that area under the laser treatment.…”

Section: Discussionmentioning

confidence: 86%

Laser-induced modification of amorphous GST225 phase change materials

Kozyukhin

Lazarenko

Vorobyov

et al. 2019

Matériaux & Techniques

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In this paper, we have studied the crystallization behavior of amorphous GST225 thin films upon irradiation with nanosecond laser pulses. Crystalline and melt-quenched amorphous regions were produced by exposure to laser single or multipulses, and were characterized by the optical microscopy and by the micro-Raman spectroscopy. Transition region between the amorphous and crystalline parts of the laser-modified area was investigated by atomic force microscopy. Using irradiation by single laser pulses with varying fluence, it was verified that crystallization was possible if the fluence is more than 90.4 mJ/cm2.

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“…It is known that the thermal and electrical fields are the two main routes to modify structure and properties of Ge–Sb–Te materials. Amorphous Ge 2 Sb 2 Te 5 can be crystallized into rocksalt‐type Ge 2 Sb 2 Te 5 when the temperature increases (Kooi et al ., ) or electron/laser irradiation (Kooi et al ., ; Zhang et al ., ; Zhou et al ., ) is conducted. However, such structural transition is usually accompanied without modification of chemical composition.…”

mentioning

confidence: 99%