Crystallization of GeTe phase change thin films grown by pulsed electron-beam deposition

Bathaei, Neda; Weng, Binbin; Sigmarsson, Hjalti H.

doi:10.1016/j.mssp.2022.106781

Materials Science in Semiconductor Processing

2022

DOI: 10.1016/j.mssp.2022.106781

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Crystallization of GeTe phase change thin films grown by pulsed electron-beam deposition

Neda Bathaei

Binbin Weng

Hjalti H. Sigmarsson

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2024

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Cited by 4 publications

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Trends in GeTe Thermoelectrics: From Fundamentals to Applications

Li,

Shi,

Chen

2024

Adv Funct Materials

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Germanium telluride (GeTe) with ultrafast ferroelectric transition, Rashba‐like electronic transport, and anomalous phonon anharmonicity are historically studied for potential memorizing and thermoelectric applications. Due to recent breakthroughs in spintronics, valleytronics, orbitronics, pre‐eminent GeTe thermoelectrics have re‐attracted enormous interest from both academia and industries, with increasing reports of significant figure‐of‐merit over 2.7 and the maximum efficiency of up to 17.0%. Here, the emerging trends in advancing GeTe thermoelectrics, starting from fundamentals of phase transformation, crystal structure, bonding mechanisms, and transport characteristics, with a highlight on the roles of Ge_4s2 lone pairs, are timely overviewed. Technical insights in synthesis, characterization, property measurement, and computation are then summarized. After that, several innovative strategies for increasing the figure‐of‐merit, including entropy engineering, nanostructuring, and hybridization, which will further benefit near‐room‐temperature and n‐type performance, are examined. Moreover, high‐density and high‐efficiency devices with broad working temperatures are discussed as a result of rational configurational and interfacial design. In the end, perspective remarks on the challenges and outlook envisaging for next‐generation GeTe thermoelectrics, which will play a prominent role in future energy and environmental landscapes, are provided.

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Trends in GeTe Thermoelectrics: From Fundamentals to Applications

Li,

Shi,

Chen

2024

Adv Funct Materials

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Study of the amorphous and crystalline states in Ge(Te1-xSex) thick films (x = 0, 0.50) by in situ temperature-dependent structural analyses

Armand,

Silly,

Escalier

et al. 2024

Journal of Alloys and Compounds Communications

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Manifestation on the choice of a suitable combination of MIS for proficient Schottky diodes for optoelectronic applications: A comprehensive review

Alan Sibu,

Gayathri,

Akila

et al. 2024

Nano Energy

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Crystallization of GeTe phase change thin films grown by pulsed electron-beam deposition

Cited by 4 publications

References 21 publications

Trends in GeTe Thermoelectrics: From Fundamentals to Applications

Trends in GeTe Thermoelectrics: From Fundamentals to Applications

Study of the amorphous and crystalline states in Ge(Te1-xSex) thick films (x = 0, 0.50) by in situ temperature-dependent structural analyses

Manifestation on the choice of a suitable combination of MIS for proficient Schottky diodes for optoelectronic applications: A comprehensive review

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