Crystallization of GST225 thin film induced by a single femtosecond laser pulse: Experimental and theoretical study

Kunkel, T. S.; Vorobyov, Yu. V.; Smayev, M. P.; Lazarenko, Petr; Romashkin, A. V.; Kozyukhin, S. A.

doi:10.1016/j.mssp.2021.106350

Cited by 13 publications

(5 citation statements)

References 39 publications

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“…This study paves the way for the formation of stable 2D diamond and diamond thin films. [159] Other studies on 2DM have described the phase transitions in Ge 2 Sb 2 Te 5 [160,161] and Fe 3 GeTe 2 [162] caused by fs-laser pulses. The reversible transition from the crystalline to the amorphous phase in Ge 2 Sb 2 Te 5 occurred within only one fs pulse, which is highly desired for nonvolatile electronic memory devices.…”

Section: Phase Transitionmentioning

confidence: 99%

Ultrafast Laser Processing of 2D Materials: Novel Routes to Advanced Devices

Emelianov,

Pettersson,

Bobrinetskiy

2024

Advanced Materials

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Ultrafast laser processing has emerged as a versatile technique for modifying materials and introducing novel functionalities. Over the past decade, this method has demonstrated remarkable advantages in the manipulation of 2D layered materials, including synthesis, structuring, functionalization, and local patterning. Unlike continuous‐wave and long‐pulsed optical methods, ultrafast lasers offer a solution for thermal heating issues. Nonlinear interactions between ultrafast laser pulses and the atomic lattice of 2D materials substantially influence their chemical and physical properties. This paper highlights the transformative role of ultrafast laser pulses in maskless green technology, enabling subtractive, and additive processes that unveil ways for advanced devices. Utilizing the synergetic effect between the energy states within the atomic layers and ultrafast laser irradiation, it is feasible to achieve unprecedented resolutions down to several nanometers. Recent advancements are discussed in functionalization, doping, atomic reconstruction, phase transformation, and 2D and 3D micro‐ and nanopatterning. A forward‐looking perspective on a wide array of applications of 2D materials, along with device fabrication featuring novel physical and chemical properties through direct ultrafast laser writing, is also provided.

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Section: Phase Transitionmentioning

confidence: 99%

Ultrafast Laser Processing of 2D Materials: Novel Routes to Advanced Devices

Emelianov,

Pettersson,

Bobrinetskiy

2024

Advanced Materials

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“…Below F min , the phase state remains unchanged, while above F cr the film is fully crystallized. We should note that since the GST crystallization is a cumulative process, , the reported window in which LIPSS formation is possible ( F min < F < F cr ) is dependent not only on laser wavelength but also on scanning parameters, namely, scanning speed and the overlap between the adjacent lines. Moreover, it is affected by the direction of scanning due to strong polarization of SPP wave (see the Supporting Information, Figure S1).…”

Section: Multicycle and Multilevel Phase Change Lipss On Planar Waveg...mentioning

confidence: 99%

Reversible Laser Imprinting of Phase Change Photonic Structures in Integrated Waveguides

Menshikov,

Lazarenko,

Kovalyuk

et al. 2024

ACS Appl. Mater. Interfaces

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Formation of laser-induced periodic surface structures (LIPSS) is known as a fast and robust method of functionalization of material surfaces. Of particular interest are LIPSS that manifest as periodic modulation of phase state of the material, as it implies reversibility of phase modification that constitute rewritable LIPSS, and recently was demonstrated for chalcogenide phase change materials (PCMs). Due to remarkable properties of chalcogenide PCMs�nonvolatality, prominent optical contrast and ns switching speed� such novel phase change LIPSS hold potential for exciting applications in all-optical tunable photonics. In this work we explore phase change LIPSS formation in thin films of Ge 2 Sb 2 Te 5 (GST) integrated with planar and rib waveguides. We demonstrate that by fine-tuning laser radiation, the morphology of phase change LIPSS can be controlled, including their period and fill factor, and investigate the limitations of multicycle rewriting of the structures. We also demonstrate the formation of phase change LIPSS on a 1D waveguide, which has potential for use as tunable Bragg filters or structures for on-demand light decoupling into the far-field. The presented concept of applying phase change LIPSS offers a promising approach to enable fast and simple tuning in integrated photonic devices.

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“…In this context, the crystallization induced by fs pulses appears to be very promising. 33,37,41) The above result suggests that the material having high L assists the swift crystallization, and then we are tempted to explore a microscopic origin of L. Thermodynamically, we see…”

mentioning

confidence: 95%

“…[33][34][35][36] For the duration, we tentatively approximate it with a minimal time of crystallite nucleation that is predicted by MD simulations. [25][26][27][28][29] (To the author's knowledge, despite notable demonstrations of crystallization under fs excitations, 33,37) no time-resolved structural analyses have demonstrated sub-ns crystallization for a-GST.) And, the volume V (=πR 2 d) is calculated from an effective thickness d of 100 nm (a film thickness or a penetration depth of excitation light) and a diameter 2R of 500 nm, which approximates the spot size of excitation light.…”

mentioning

confidence: 99%

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Mechanisms of fast crystallization in amorphous Ge₂Sb₂Te₅ films

Tanaka

2023

Jpn. J. Appl. Phys.

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Ge2Sb2Te5 has been widely utilized as phase-change films, while a long-standing problem is the seemingly paradoxical feature; room-temperature durability of amorphous states which undergo rapid crystallization upon pulsed, optical/electrical excitations. The model that takes high fragility of the film into account has been proposed for reconciling this contrastive behavior, while the idea faces some difficulties. This work suggests through simple calculations that explosive latent-heat spikes produced by ns pulses could accelerate the crystallization. Although crystal growths are assumed to need some durations, the latent heat generated by shorter stimuli is able to trigger the swift crystallization.

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Crystallization of GST225 thin film induced by a single femtosecond laser pulse: Experimental and theoretical study

Cited by 13 publications

References 39 publications

Ultrafast Laser Processing of 2D Materials: Novel Routes to Advanced Devices

Ultrafast Laser Processing of 2D Materials: Novel Routes to Advanced Devices

Reversible Laser Imprinting of Phase Change Photonic Structures in Integrated Waveguides

Mechanisms of fast crystallization in amorphous Ge₂Sb₂Te₅ films

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Crystallization of GST225 thin film induced by a single femtosecond laser pulse: Experimental and theoretical study

Cited by 13 publications

References 39 publications

Ultrafast Laser Processing of 2D Materials: Novel Routes to Advanced Devices

Ultrafast Laser Processing of 2D Materials: Novel Routes to Advanced Devices

Reversible Laser Imprinting of Phase Change Photonic Structures in Integrated Waveguides

Mechanisms of fast crystallization in amorphous Ge2Sb2Te5 films

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Product

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Mechanisms of fast crystallization in amorphous Ge₂Sb₂Te₅ films