Crystallization process and electro-optical properties of In2O3 and ITO thin films

Adurodija, F. O.; Semple, Lynne; Brüning, Ralf

doi:10.1007/s10853-006-0038-3

Cited by 55 publications

(32 citation statements)

References 30 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The smaller, four‐fold coordinated Zn may be important in stabilizing the structural framework of a‐ ZITO. These films have a much higher crystallization temperature ( T c ‐ from our recent work, 300°C–345°C) than that of a ‐In 2 O 3 (165°C–210°C) and a ‐ITO (185°C–230°C) . Both the medium range order and higher T c of a ‐ZITO are consistent with a homogeneous amorphous phase in the films.…”

Section: Discussionsupporting

confidence: 50%

See 1 more Smart Citation

Structural and Physical Property Studies of Amorphous Zn–In–Sn–O Thin Films

Proffit

Buchholz

et al. 2012

J. Am. Ceram. Soc.

View full text Add to dashboard Cite

The structures in amorphous (a‐) Zn, Sn co‐doped In2O3 (ZITO) thin films grown by pulsed laser deposition on glass under varying oxygen pressure or with varying Sn:Zn ratios were determined using X‐ray absorption spectroscopy and anomalous X‐ray scattering. Typical structures around cations in a‐ZITO films are described and compared with crystalline (c‐) ZITO films. The results show that the Zn cations are fourfold coordinated with Zn–O bond lengths of 1.98 ± 0.02 Å, which is close to that in bulk ZnO. As a consequence, the second coordination shells around Zn contract. At longer distances away from Zn, the structure is commensurate with the averaged structure. The unit volume around In also contracts slightly compared to bulk In2O3, whereas the Sn–O bond length is similar to the one in bulk SnO2. These unique structural characteristics may account for the films' superior thermal stability over amorphous Sn‐doped In2O3, and suggest that Zn and Sn act as network‐forming cations. Like in c‐ZITO, coordination numbers (N) around Sn, In, and Zn follow the order NSn > NIn > NZn. Unlike in c‐ZITO, where electrical properties change significantly with a slight variation in the Sn:Zn ratio, this variation does not markedly alter the electrical properties, or the local structures, of a‐ZITO films. Dramatic changes in the electrical properties occur for films grown under various oxygen pressures, which point to oxygen “defects” as the source of charge carriers.

show abstract

Section: Discussionsupporting

confidence: 50%

“…These films have a much higher crystallization temperature (T c -from our recent work, 300°C-345°C) than that of a-In 2 O 3 (165°C-210°C) 39 and a-ITO (185°C-230°C). 40 Both the medium range order and higher T c of a-ZITO are consistent with a homogeneous amorphous phase in the films.…”

Section: Discussionmentioning

confidence: 77%

Structural and Physical Property Studies of Amorphous Zn–In–Sn–O Thin Films

Proffit

Buchholz

et al. 2012

J. Am. Ceram. Soc.

View full text Add to dashboard Cite

show abstract

“…The characterization of ITO films is not considered in this paper because already widely investigated in the literature [20][21][22][23][24][25][26][27][28][29]. Samples as thin as 20 nm were grown on amorphous silica substrates at room temperature.…”

Section: Introductionmentioning

confidence: 99%

Structural characterization of ultrathin Cr-doped ITO layers deposited by double-target pulsed laser ablation

Cesaria¹,

Caricato²,

Leggieri³

et al. 2011

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

In this paper we report on the growth and structural characterization of very thin (20 nm) Cr-doped ITO films, deposited at room temperature by double-target pulsed laser ablation on amorphous silica substrates. The role of Cr atoms in the ITO matrix is carefully investigated with increasing doping content by transmission electron microscopy (TEM). Selected-area electron diffraction, conventional bright field and dark field as well as high-resolution TEM analyses, and energy dispersive x-ray spectroscopy demonstrate that (i) crystallization features occur despite the low growth temperature and small thickness, (ii) no chromium or chromium oxide secondary phases are detectable, regardless of the film doping levels, (iii) the films crystallize as crystalline flakes forming large-angle grain boundaries; (iv) the observed flakes consist of crystalline planes with local bending of the crystal lattice. Thickness and compositional information about the films are obtained by Rutherford back-scattering spectrometry. Results are discussed by considering the combined effects of growth temperature, smaller ionic radius of the Cr cation compared with the trivalent In ion, doping level, film thickness, the double-target doping technique and peculiarities of the pulsed laser deposition method.

show abstract

“…The typical model used to describe the conductivity of the ITO takes into account the carrier density determined both by the oxygen vacancies and by the doping tin atoms, acting as electron donors when the tin oxidation state is (IV), as in SnO 2 [15][16][17]. Of course, the annealing treatment, performed in oxidizing atmosphere, promotes the oxidation of the layer (reducing the oxygen vacancies and consequently reducing the amount of the charge carries) increasing the resistivity of the ITO layers.…”

Section: Resultsmentioning

confidence: 99%