Crystallization process of in situ annealed Ge2Sb2Te5 films

Zhang, Lei; Han, Xiaodong; Zhang, Ze

doi:10.1016/j.jallcom.2012.05.007

Journal of Alloys and Compounds

2012

DOI: 10.1016/j.jallcom.2012.05.007

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Crystallization process of in situ annealed Ge2Sb2Te5 films

Lei Zhang

Xiaodong Han

Ze Zhang

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Cited by 12 publications

(1 citation statement)

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“…O ne of the most promising candidates for nonvolatile memories is phase change memory (PCM) based on the rapid reversible phase change effect in the phase change materials with a large change in resistance between its amorphous and crystalline state. 1) As the most important part of PCM, various phase change materials have attracted more and more attention. Ge 2 Sb 2 Te 5 is one of the most popular chalcogenide phase change materials used as storage media in PCM because of its outstanding overall phase-change performances.…”

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confidence: 99%

Improved performances of Ge₂Sb₂Te₅based phase change memory by W doping

Cheng

Mao

Zhang

et al. 2014

Jpn. J. Appl. Phys.

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W-doped Ge 2 Sb 2 Te 5 materials have been investigated for phase change memory applications. W 0.08 (Ge 2 Sb 2 Te 5 ) 0.92 phase change film exhibits a higher crystallization temperature (255 °C), better data retention of 10 years at 183 °C, and higher crystalline resistance compared with traditional Ge 2 Sb 2 Te 5 . The W x (Ge 2 Sb 2 Te 5 ) 1%x films crystallize into a stable face-centered cubic phase with uniform crystal grains. Phase-change memory device based on W 0.08 (Ge 2 Sb 2 Te 5 ) 0.92 shows short operation time (10 ns) and good endurance (6 ' 10 5 cycles). W x (Ge 2 Sb 2 Te 5 ) 1%x material is a promising candidate for phase-change memory applications that require good data retention and fast operation speed.

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mentioning

confidence: 99%

Improved performances of Ge₂Sb₂Te₅based phase change memory by W doping

Cheng

Mao

Zhang

et al. 2014

Jpn. J. Appl. Phys.

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Robust thermal stability in DRAM-like Sb2Te-based phase change memory by Hafnium modified

Wang

Yuan

Chen

et al. 2022

J Mater Sci: Mater Electron

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Origin of high elastic strain in amorphous silica nanowires

et al. 2015

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An understanding of the origin of elastic strain is extremely important for both crystalline materials and amorphous materials. Owing to the lack of a long range order in their structure, it is arduous to dynamically study the elastic mechanism of amorphous materials experimentally at atomic scale compared with their crystalline counterparts. Here, the elastic deformation mechanism of amorphous silica nanowires (NWs) has been studied for the first time via in situ elastic tensile tests in a transmission electron microscope. Radial distribution functions (RDFs) calculated from the corresponding selected area electron diffraction patterns (SAEDPs) at different strains were used to reconstruct a structural model based on the reverse Monte-Carlo (RMC) method. The result interestingly indicates that the elastic strain of silica glass NWs can be mainly attributed to the elastic elongation of the bond length accompanied by a change in the bond angle distribution. This work is useful for understanding the high strength of amorphous materials.The two most crucial properties of a structural material are its elastic strain limit and plasticity. Plasticity is the property indicating the flexibility of a material, while the elastic strain limit represents the maximum stress that the material can withstand before yielding. The development of materials with high elastic strain limit and excellent plasticity is an urgent target for researchers [1−4]. Amorphous materials such as oxide glasses and metallic glasses are widely used in military applications. Unlike for their crystalline counterparts, there is still inadequate comprehension of the extraordinary behaviors of such glasses [5−10]. In nano-sized objects, smaller is stronger, owing to the combination of their decreased defect density and increased strength and elastic strain. Experimental elastic strain limits of more than 7.8% for ZnO nanowires (NWs) [11,12] the size of such glasses minimizes flaw size and maximizes their strength (i.e., elastic strain). Elimination of extrinsic flaws and decreased internal structural defects can lead to an outstanding large elastic strain limit of more than 3-6% for submicro-sized glasses [16−19], in which shear bands are suppressed owing to the reduction in size [16]. The ultimate strength of silica NWs is higher than 10 GPa and increases with decreasing NW diameter. The reduced possibility of having large cracks in small samples is the main reason for their high strength [20]. Molecular dynamic simulations also indicate such a size-dependent elasticity for amorphous silica NWs originating from coupling between core softening and surface stiffening of each NW the structure of which is different from its bulk counterpart [21]. In our systematic studies, an approximately 13% elastic strain limit for silica NWs with diameters around 50 nm was confirmed. The uniaxial tensile stress corresponding to such an elastic strain limit would be 9.5 GPa (assuming a Young's modulus of 73 GPa for silica NWs [22]). Recent results have revealed that the...

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Crystallization process of in situ annealed Ge2Sb2Te5 films

Cited by 12 publications

References 32 publications

Improved performances of Ge₂Sb₂Te₅based phase change memory by W doping

Improved performances of Ge₂Sb₂Te₅based phase change memory by W doping

Robust thermal stability in DRAM-like Sb2Te-based phase change memory by Hafnium modified

Origin of high elastic strain in amorphous silica nanowires

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Crystallization process of in situ annealed Ge2Sb2Te5 films

Cited by 12 publications

References 32 publications

Improved performances of Ge2Sb2Te5based phase change memory by W doping

Improved performances of Ge2Sb2Te5based phase change memory by W doping

Robust thermal stability in DRAM-like Sb2Te-based phase change memory by Hafnium modified

Origin of high elastic strain in amorphous silica nanowires

Contact Info

Product

Resources

About

Improved performances of Ge₂Sb₂Te₅based phase change memory by W doping

Improved performances of Ge₂Sb₂Te₅based phase change memory by W doping