Crystallographic orientation and strain distribution in AlN seeds grown on 6H–SiC substrates by the PVT method

Yao, Xiaogang; Wang, Guodong; Tu, Huayao; Liu, Shengfu; Yang, Mingzhi; Kong, Zhen; Shao, Yongliang; Wu, Yongzhong

doi:10.1039/d1ce00366f

Cited by 7 publications

(12 citation statements)

References 34 publications

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“…4 (670.8 and 657.4 cm −1 ) are the phonon frequencies of E 1 (TO) and E 2 (high) for strain-free AlN, respectively. [34][35][36] Here, we extracted the E 1 (TO) and E 2 (high) peak positions of all the a-AlN samples from the Raman curves in Fig. 4 1 and Table 1, it can be found that the blue-shift of the Raman peaks increases with the decreasing BSFD, which means that the compressive stress was accumulated with the decrease in BSFD.…”

Section: Resultsmentioning

confidence: 99%

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The stacking fault annihilation in a-plane AlN during high-temperature annealing

et al. 2023

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Section: Resultsmentioning

confidence: 99%

“…4 (670.8 and 657.4 cm −1 ) are the phonon frequencies of E 1 (TO) and E 2 (high) for strain-free AlN, respectively. 34–36 Here, we extracted the E 1 (TO) and E 2 (high) peak positions of all the a -AlN samples from the Raman curves in Fig. 4(a) and (c), and the results are summarized in Fig.…”

Section: Resultsmentioning

confidence: 99%

The stacking fault annihilation in a-plane AlN during high-temperature annealing

et al. 2023

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“…23 The wide fwhm of the XRD ω-scan rocking curves and the E 2 (high) mode of Raman spectra is commonly seen in many studies of AlN layers heteroepitaxial growth on SiC substrates. 22,26,33 It mainly comes from the lattice disorder and nonuniform strain caused by relatively high concentrations of carbon and silicon impurities, which is a common problem in such heteroepitaxy growth.…”

Section: S P P K T ( )mentioning

confidence: 99%

“…Hence, a deep comprehension and proper design of the heterogeneous growth process of AlN on SiC seeds are imperative. For finding the appropriate growth condition window and growth mode, many studies focus on the growth temperature, crystal orientation, and the seed polarity-dependence. − The growth of heterogeneous AlN crystals grown on SiC substrates with diameters of 15, 28, 40, and 43 mm has been demonstrated. ,− To the best of our knowledge, few studies have been reported on the surface control with growth process design and heterogeneous growth of usably thick AlN crystals larger than 50.2 mm (2-in.) in diameter.…”

Section: Introductionmentioning

confidence: 99%

Surface Control of AlN Single Crystal Growth on SiC Substrate

Chen,

Zhao,

Zhang

et al. 2024

Crystal Growth & Design

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In this study, the process of surface morphology control was researched by combining the computation fluid dynamics (CFD) simulations and physical vapor transport (PVT) growth experiments. The results indicate the essentiality of preserving the surface structure of SiC substrate with macroscopic steps at the initial stage of the heterogeneous PVT growth. We identified an optimal range of growth temperature (T g) and pressure to maintain the active Al vapor below a critical threshold. In the subsequent process, the pivotal factor for controlling the surface morphology of the AlN layer is identified as the supersaturation near the growing surface. Excessive supersaturation leads to a transition from a 2D to a 3D growth mode, resulting in a shift from a smooth to a rough surface morphology. An appropriate level of supersaturation can be achieved by carefully controlling the T g, striking a balance between high surface quality and growth rate. Herein, we proposed a two-step PVT method for cultivating high-surface-quality AlN crystals on SiC substrates. At the first stage, the T g is maintained below a threshold corresponding to the critical Al vapor pressure to preserve the surface structure until the SiC surface is completely covered by AlN. Then, T g is elevated to near transition temperature (T tran) to continue AlN single crystal growth at a proper rate for a long time, where T tran is defined as the growth temperature at which the transition of the dominant mode from step growth to 3D growth happens. Two-inch-diameter AlN single crystals of thicknesses of nearly 1 mm with a smooth and lustrous surface have been obtained on SiC substrate by the two-step method.

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“…As an ultrawide bandgap semiconductor material, AlN has an ultra-wideband gap of up to 6.2 eV which gives it the ability to remain transparent in the deep UV region (<200 nm). It is widely used in many fields, such as ultraviolet disinfection, water purification, gas sensing and ultraviolet curing [5][6][7]. In addition, because of its unique physical and chemical properties, it has an important presence in the fields of surface acoustic waves, high-frequency devices, high-voltage devices or high-power devices, and so on [8][9][10][11][12].…”

Section: Introductionmentioning

confidence: 99%

Comparative Studies of c- and m-Plane AlN Seeds Grown by Physical Vapor Transport

et al. 2022

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The ultra-wide bandgap semiconductor AlN has attracted a great deal of attention owing to its wide application potential in the field of electronics and optoelectronic devices. In this report, based on the mechanism of the physical vapor transport (PVT) growth of AlN crystal, the c- and m-plane AlN seed crystals were prepared simultaneously through special temperature field design. It is proved that AlN crystals with different orientations can be obtained at the same temperature field. The structure parameter of AlN crystal was obtained through the characteristic evaluations. In detail, XPS was used to analyze the chemical states and bonding states of the surface of seed crystals. The content of oxygen varied along with distinct orientations. Raman spectrum documented a small level of compressive stress on these crystal seeds. Tested results confirmed that the prepared AlN crystal seeds had high quality.

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Crystallographic orientation and strain distribution in AlN seeds grown on 6H–SiC substrates by the PVT method

Abstract: As a nitride semiconductor with a wide bandgap, AlN is a promising material because of its broad applications in electronics and opto-electronics. In this study, a primary AlN seed was...

Cited by 7 publications

References 34 publications

The stacking fault annihilation in a-plane AlN during high-temperature annealing

The stacking fault annihilation in a-plane AlN during high-temperature annealing

Surface Control of AlN Single Crystal Growth on SiC Substrate

Comparative Studies of c- and m-Plane AlN Seeds Grown by Physical Vapor Transport

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