2019
DOI: 10.1016/j.nimb.2019.06.026
|View full text |Cite
|
Sign up to set email alerts
|

Crystallographic orientation dependence of radiation damage in Ga-ion irradiated Ni-based alloy processed by a focused ion beam

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2021
2021
2024
2024

Publication Types

Select...
6

Relationship

0
6

Authors

Journals

citations
Cited by 6 publications
(1 citation statement)
references
References 16 publications
0
1
0
Order By: Relevance
“…Note that the thickness of the studied nitride layer was less than 10 µm, which made it impossible to obtain thicker samples. However, usual TEM investigations suggest that the thickness of metallic materials affected by the ion beam is usually less than 30 nm which is still very small compared to the section of the current micro-specimens [34].…”
Section: Discussionmentioning
confidence: 89%
“…Note that the thickness of the studied nitride layer was less than 10 µm, which made it impossible to obtain thicker samples. However, usual TEM investigations suggest that the thickness of metallic materials affected by the ion beam is usually less than 30 nm which is still very small compared to the section of the current micro-specimens [34].…”
Section: Discussionmentioning
confidence: 89%