Crystallographic orientation-dependent optical properties of GaInSb mid-infrared quantum well laser

Hasan, Mahbub; Islam, Md. Rafiqul; Teramoto, Koji

doi:10.1016/j.ijleo.2011.09.021

Cited by 11 publications

(7 citation statements)

References 20 publications

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“…It is well known that some mechanical and optical properties of semiconductor materials and devices strongly depend on crystal orientation [12] [13]. The polycrystalline Si-based solar cells exhibit poor efficiency that is speculated to be due to residual strain induced in the grain boundary as reported so far [8].…”

Section: Introductionmentioning

confidence: 89%

Modeling of Orientation-Dependent Photoelastic Constants in Cubic Crystal System

Pinky¹,

Islam²,

Alam³

et al. 2014

MSA

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Euler's rotation theorem and tensor rotation technique are applied to develop a generalized mathematical model for determining photoelastic constants in arbitrary orientation of cubic crystal system. Two times rotations are utilized in the model relating to crystallographic coordinates with Cartesian coordinates. The symmetry of photoelastic constants is found to have strong dependence with rotation angle. Using the model, one can determine photoelastic constants in any orientation by selecting appropriate rotation angle. The outcome of this study helps to characterize spatial variation of residual strain in crystalline as well as polycrystalline materials having cubic structure using the experimental technique known as scanning infrared polariscope.

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Section: Introductionmentioning

confidence: 89%

Modeling of Orientation-Dependent Photoelastic Constants in Cubic Crystal System

Pinky¹,

Islam²,

Alam³

et al. 2014

MSA

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“…The optical gain as a function of energy for quantum well structure can be approximated by [10]: (14) Here, q is denoted as free electron charge, is the reduced Planck constant, n is the index of refraction, is the free space dielectric constant, c is the speed of light, E is the photon energy, E cn is the conduction band energy, E kpm is the m th valence sub-bands, and M nm is the momentum matrix element in strained quantum well architecture. where, is the photon relaxation time.…”

Section: Optical Gain and Momentum Matrixmentioning

confidence: 99%

“…In 2012, M.M. Hasan reported crystallographic orientation-dependent optical properties of GaInSb mid-infrared QW laser on GaSb substrate [10]. To best of our knowledge, the optical emission profile and P-I profile of AlGaAs based VCSEL in nonconventional orientation is still unavailable.…”

Section: Introductionmentioning

confidence: 99%

Optoelectronic Performance of Vertical Cavity Surface Emitting AlGaAs/GaAs QW Laser in Non-Conventional Orientation

Roy¹,

Ahsan²,

Kirtania³

2017

IJCA

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This paper attempts to address a comprehensive in-depth study on the orientation-dependent optoelectronic performance and power-current profile of lattice matched 670nm Al 0.3 Ga 0.7 As/GaAs Single QW Vertical Cavity Surface Emitting Laser (VCSEL) in MATLAB by solving an eightband k.p Hamiltonian using finite difference method at Γ-point. The analysis is done along conventional (100) as well as non-conventional (110), (111), (113) and (131) crystal orientations. It is seen that there is a substantial correlation of the energy band dispersion profile and peak gain with change of crystal orientation due to change in energy splitting between conduction band to heavy and light hole. Highest optical gain, maximum optical power and minimum threshold current is obtained in (111) crystal orientation. This numerical result demonstrates that (111)-oriented epilayer can be incorporated into the active region of this laser system in order to attain improved performance for ultrahigh speed lightwave communications technology. General TermsMATLAB, Energy band dispersion, PI response of QW Laser

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“…It is generally known that lasers' optical gain as well as threshold current profile could be enhanced by adding a compressively stretched QW inside the active site [13]. Crystal orientation affects the dispersion of energy bands of fracturing strained QW, specifically the energy gap between the valance sub-bands, which results to variations in states density and efficient mass of an electron [14]. Even though (100)-oriented progress produces good crystalline reliability QWs and PZfield has no effect on with the strain values that same orientation indicated, performance in quantum but instead optical gain are perceived as being reduced, owing to the lower charge carriers' transition capability amongst the conduction band as well as the valence band at the gamma (Γ)-point, which is partly because of minimized energy partitioning amongst valence sub-bands [15].…”

Section: Introductionmentioning

confidence: 99%

“…Lasing emission is largely determined by gaps in energy bands including curvature of band at the -point. Crystal orientation is an important parameter to adjust the optoelectronic properties and electrical spectra of a straining ZB QW laser in addition to improve its efficiency [14,15]. The latest fabrication methods, MOCVD (Metal-Organic Chemical Vapor Deposition) and MBE (Molecular BeamEpitaxy), propose crystal formation in an unconventional orientation.…”

Section: Introductionmentioning

confidence: 99%

Optical and Electrical Performance Analysis of InGaAs/InP Laser for Various Crystal Orientations

Mijwil

2022

AJET

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The optoelectronic achievement of a lattice matching InGaAs/InP lateral cavity surface radiating LASER in crystal orientations (100), (110), (111), (113), and (131) is computationally simulated utilising MATLAB by attempting to solve a k.p Hamiltonian of eight-band utilising only a finite difference strategy with spin-orbit linkage. To shift wave-vector k as well as Hamiltonian from traditional (100) plane orientation, tensor plane revolution equations are used. It is demonstrated that optical emission spectrum and crystal plane alignments have a significant correlation. At a carriers injection density of 2.50 x 1018 per cm3, the maximum and minimum gains are measured in the (111) as well as (100) orientations, respectively, with optimum emission wavelengths of 1770.00nm and 1680.00nm. This research will serve as a catalyst for the development of ultra-fast optoelectronic devices with improved performance thanks to the use of non-100 orientation epitaxial layers.

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Crystallographic orientation-dependent optical properties of GaInSb mid-infrared quantum well laser

Cited by 11 publications

References 20 publications

Modeling of Orientation-Dependent Photoelastic Constants in Cubic Crystal System

Modeling of Orientation-Dependent Photoelastic Constants in Cubic Crystal System

Optoelectronic Performance of Vertical Cavity Surface Emitting AlGaAs/GaAs QW Laser in Non-Conventional Orientation

Optical and Electrical Performance Analysis of InGaAs/InP Laser for Various Crystal Orientations

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