2018
DOI: 10.1002/adma.201705501
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Crystallographic Orientation Dependent Reactive Ion Etching in Single Crystal Diamond

Abstract: Sculpturing desired shapes in single crystal diamond is ever more crucial in the realization of complex devices for nanophotonics, quantum computing, and quantum optics. The crystallographic orientation dependent wet etch of single crystalline silicon in potassium hydroxide (KOH) allows a range of shapes to be formed and has significant impacts on microelectromechanical systems (MEMS), atomic force microscopy (AFM), and microfluidics. Here, a crystal direction dependent dry etching principle in an inductively … Show more

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Cited by 51 publications
(26 citation statements)
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References 47 publications
(151 reference statements)
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“…This process has seen adoption by researchers fabricating a variety of nanoscale structures from SCD [68][69][70] , and the properties of the quasi-isotropic etch and its interaction with the diamond crystal planes have been investigated in detail in Ref. 71 .…”
Section: Process Overviewmentioning
confidence: 99%
“…This process has seen adoption by researchers fabricating a variety of nanoscale structures from SCD [68][69][70] , and the properties of the quasi-isotropic etch and its interaction with the diamond crystal planes have been investigated in detail in Ref. 71 .…”
Section: Process Overviewmentioning
confidence: 99%
“…Tailoring the scanning probe geometry can enhance photon collection, AFM capability and spatial resolution. Nanopillars with large taper angles obtained via plane dependent dry etching enhance photon collection due to the combined effect of optical wave guiding and adiabatic changes of the effective refractive index [ 52 ]. Figure 3 A,B show pillars with various taper angles.…”
Section: Photonic Componentsmentioning
confidence: 99%
“…It should be noted that the electrons might not fully transfer their thermal energy to the etching species but are still a clear indication of the plasma density [33]. In contrast in the case of a biased plasma, the energy of the etching species will be mainly governed by the DC bias [25]. We use the measured optical emission spectra of the plasmas to extract T el .…”
Section: Sample Pre-treatment: Stress Relief-and Pre-etchmentioning
confidence: 99%