Crystallographic properties and elemental migration in two-stage prepared CuIn1−Al Se2 thin films for photovoltaic applications

Abstract

Two-stage fabrication of CuIn 1-x Al x Se 2 thin films for photovoltaic absorbers using sputtered

Photoelectrochemical water splitting using Cu(In,Al)Se2 photoelectrodes developed via selenization of sputtered Cu–In–Al metal precursors

“…Indium loss should thus be greater than Al loss during the selenization process. Using the formation pathway of selenization of Cu-In-Al metal precursors proposed by Aninat et al [32] and Jost et al [33], the formation of binary selenides CuSe 2 and In 3 Se 4 was detected at the melting point of selenium (221°C). CuSe 2 and In 3 Se 4 transformed into Cu x Se (x ¼1, 2) and InSe at temperatures of 332-377°C and 310°C, respectively.…”

“…The segregation of Al at the bottom of samples took place at 250°C [32]. Cu and In first react with Se to form binary metal selenides and then transform into ternary metal selenide via reactions (1) and (2) at 221-380°C.…”

Chemical analysis of Cd1−xZnxS/CdTe solar cells by plasma profiling TOFMS

“…2 The PP-TOFMS technique in particular combines fast erosion rates (few nm/s) with wide spectral (full mass coverage) detection. Furthermore, the recent capability of pulsing the RF excitation, found to be a key for profiling materials such as thin conductive layers on thick glass as developed for solar cells, 10 was also employed here to determine the dopant (As) concentration (C As ) in the CdTe absorber by PP-TOFMS. The pulsed RF mode reduces the thermal stress (induced by the plasma) and the sputtering rate (thereby enhancing the depth resolution) without compromise on sensitivity.…”

Electronic defect study on low temperature processed Cu(In,Ga)Se2thin-film solar cells and the influence of an Sb layer

“…PP-TOFMS is, like SIMS (secondary ion mass spectrometry), a depth profiling technique based on material erosion and dynamic measurement of sputtered species. In PP-TOFMS a plasma source is coupled with a time of flight mass analyzer [17][18][19]. The intensity and energy of the commonly used Argon ions and fast neutrals causing material sputtering is much higher in PP-TOFMS compared to SIMS, leading to much faster analysis.…”