CsPbBr3 Perovskite Quantum Dot Light‐Emitting Diodes Using Atomic Layer Deposited Al2O3 and ZnO Interlayers

Yun, Hwang Sik; Noh, Kyeongchan; Kim, Jigeon; Noh, Sung Hoon; Kim, Gi Hwan; Lee, Woongkyu; Na, Hyon Bin; Yoon, Tae‐Sik; Jang, Jaeyoung; Kim, Young-Hoon; Cho, Seong‐Yong

doi:10.1002/pssr.201900573

Cited by 21 publications

(12 citation statements)

References 43 publications

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“…The substrate was unloaded from a glovebox, and ZnO was deposited by ALD on the QD layer in the ALD chamber at 130 °C. 33 DEZ was used as the precursor, and H 2 O was used as the reactant. The pulsing time was 0.1 s, and the purging times were 15 and 50 s, respectively.…”

Section: ■ Experimental Sectionmentioning

confidence: 99%

High-Resolution Colloidal Quantum Dot Film Photolithography via Atomic Layer Deposition of ZnO

Kim

Lee

et al. 2021

ACS Appl. Mater. Interfaces

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High-resolution patterning of quantum dot (QD) films is one of the preconditions for the practical use of QD-based emissive display platforms. Recently, inkjet printing and transfer printing have been actively developed; however, high-resolution patterning is still limited owing to nozzle-clogging issues and coffee ring effects during the inkjet printing and kinetic parameters such as pickup and peeling speed during the transfer process. Consequently, employing direct optical lithography would be highly beneficial owing to its well-established process in the semiconductor industry; however, exposing the photoresist (PR) on top of the QD film deteriorates the QD film underneath. This is because a majority of the solvents for PR easily dissolve the pre-existing QD films. In this study, we present a conventional optical lithography process to obtain solvent resistance by reacting the QD film surface with diethylzinc (DEZ) precursors using atomic layer deposition. It was confirmed that, by reacting the QD surface with DEZ and coating PR directly on top of the QD film, a typical photolithography process can be performed to generate a red/green/blue pixel of 3000 ppi or more. QD electroluminescence devices were fabricated with all primary colors of QDs; moreover, compared to reference QD-LED devices, the patterned QD-LED devices exhibited enhanced brightness and efficiency.

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Section: ■ Experimental Sectionmentioning

confidence: 99%

High-Resolution Colloidal Quantum Dot Film Photolithography via Atomic Layer Deposition of ZnO

Kim

Lee

et al. 2021

ACS Appl. Mater. Interfaces

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“…At the end, prospects of ALD applications on QDs based devices are discussed from the aspects of ALD materials, process parameters, in-situ characterization and device simulations. 86,88 CdSe/ZnS 61,66,77,87 ZnCdSSe/ZnS 68 CdSe@ZnS/ZnS 63 CdSe/CdS/ZnS 69,71 PbS 56,67,72,78,81,[83][84][85]89 PbSe 55,57,74,79,80 APbX3 60,65,70,75 Sphere 65 Film 57,58,66,69,70,73,74,77 FET 55,62,76,[78][79][80]83,86,88 Solar cell 56,82,84,85 Photodetector 67,…”

Section: (Iii) and (Iv)mentioning

confidence: 99%

“…The QDs sensitized TiO 2 nanotube arrays showed a 60% enhancement in maximum photocurrent density after ALD treatment. Different from the photoinduced electron transfer process, the key for high efficiency QDs light emitting diode (QLED) is to balance carrier concentration in emission layer through energy level regulation 60,125 . As aforementioned, the insulating layer PMMA was used to block electron transport to achieve carrier balance, and a world-record efficiency was obtained 10 .…”

Section: Interface Engineeringmentioning

confidence: 99%

Atomic layer deposition for quantum dots based devices

Zhou

Liu

Wen

et al. 2020

Opto-Electronic Advances

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Quantum dots (QDs) are promising candidates for the next-generation optical and electronic devices due to the outstanding photoluminance efficiency, tunable bandgap and facile solution synthesis. Nevertheless, the limited optoelectronic performance and poor lifetime of QDs devices hinder their further applications. As a gas-phase surface treatment method, atomic layer deposition (ALD) has shown the potential in QDs surface modification and device construction owing to the atomic-level control and excellent uniformity/conformality. In this perspective, the attempts to utilize ALD techniques in QDs modification to improve the photoluminance efficiency, stability, carrier mobility, as well as interfacial carrier utilization are introduced. ALD proves to be successful in the photoluminance quantum yield (PLQY) enhancement due to the elimination of QDs surface dangling bonds and defects. The QDs stability and devices lifetime are improved greatly through the introduction of ALD barrier layers. Furthermore, the carrier transport is ameliorated efficiently by infilling interstitial spaces during ALD process. Attributed to the ultra-thin and dense coating on the interface, the improvement on optoelectronic performance is achieved. Finally, the challenges of ALD applications in QDs at present and several prospects including ALD process optimization, in-situ characterization and computational simulations are proposed.

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“…Thus, the modification of the PNC layer is an effective way to protect it from the destruction of upper functional layers’ fabrication while ensuring ETLs’ electronic transport characteristics. As a self‐limitation gas‐phase surface chemical reaction, atomic layer deposition (ALD) can provide conformal and atomic‐level‐controlled thin‐film coating to keep PNC layers from the other solvents’ corrosion . After ALD trimethylaluminium (TMA) treatment, the PL intensity can be well kept, which implies that the stability tolerance of PNC to organic polar solvents was enhanced .…”

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confidence: 99%

Interface Engineering of CsPbBr₃ Nanocrystal Light‐Emitting Diodes via Atomic Layer Deposition

Zhou

Wang

Geng

et al. 2020

Physica Rapid Research Ltrs

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Perovskite nanocrystal (PNC) suffers from solution corrosion and water/oxygen oxidation when used in light‐emitting diodes (LEDs). Atomic layer deposition (ALD) is applied to introduce Al2O3 infilling and interface engineering for the CsPbBr3 nanocrystal emission layers, and the inorganic electron transport layer‐based CsPbBr3–ZnMgO LED device is fabricated. The introduction of Al2O3 ALD layers significantly improves the tolerance of CsPbBr3 PNC thin films to polar solvents ethanol of ZnMgO during spin coating. The operation lifetime of ALD‐treated CsPbBr3 PNC–ZnMgO LED is prolonged to about two orders of magnitude greater than that of the CsPbBr3 PNC‐TPBi LED device with a largely improved external quantum efficiency (EQE) value. Moreover, the infilling of Al2O3 into the CsPbBr3 layer boosts the carrier mobility for more than 40 times inside the light‐emission layer. However, the interfacial carrier transport between different functional layers is hindered by the insulated Al2O3 layer, which provides an effective barrier for excess electron transport. Such a favorable band alignment facilitates the carrier balance of the device and contributes to the improved electroluminescent performance of the device with ALD Al2O3 interface engineering, which is further supported by theoretical device modeling. Herein, a facile method is provided to fabricate PNC‐LED devices with both high efficiency and long‐term lifetime.

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CsPbBr₃ Perovskite Quantum Dot Light‐Emitting Diodes Using Atomic Layer Deposited Al₂O₃ and ZnO Interlayers

Cited by 21 publications

References 43 publications

High-Resolution Colloidal Quantum Dot Film Photolithography via Atomic Layer Deposition of ZnO

High-Resolution Colloidal Quantum Dot Film Photolithography via Atomic Layer Deposition of ZnO

Atomic layer deposition for quantum dots based devices

Interface Engineering of CsPbBr₃ Nanocrystal Light‐Emitting Diodes via Atomic Layer Deposition

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CsPbBr3 Perovskite Quantum Dot Light‐Emitting Diodes Using Atomic Layer Deposited Al2O3 and ZnO Interlayers

Cited by 21 publications

References 43 publications

High-Resolution Colloidal Quantum Dot Film Photolithography via Atomic Layer Deposition of ZnO

High-Resolution Colloidal Quantum Dot Film Photolithography via Atomic Layer Deposition of ZnO

Atomic layer deposition for quantum dots based devices

Interface Engineering of CsPbBr3 Nanocrystal Light‐Emitting Diodes via Atomic Layer Deposition

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Product

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CsPbBr₃ Perovskite Quantum Dot Light‐Emitting Diodes Using Atomic Layer Deposited Al₂O₃ and ZnO Interlayers

Interface Engineering of CsPbBr₃ Nanocrystal Light‐Emitting Diodes via Atomic Layer Deposition