Cu doping effect on the resistive switching behaviors of CoFe2O4 thin films
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Cited by 7 publications
References 22 publications
M–Co$${\mathrm{Fe}}_{2}{\mathrm{O}}_{4}$$ Fe 2 O 4 (where M=Cu and Zn) nanoferrites were successfully prepared using the citrate auto-combustion technique. The main idea was drawn through a complete study of the structural, morphological, thermal, magnetic, and electrical properties. The obtain findings were explained in the light of incorporation both $${\mathrm{Cu}}^{2+}$$ Cu 2 + and $${\mathrm{Zn}}^{2+}$$ Zn 2 + ions in the Co$${\mathrm{Fe}}_{2}{\mathrm{O}}_{4}$$ Fe 2 O 4 crystal. All the investigated samples were found to belong to space group (Fd-3m) and space group number (227). The crystallite size of the Co$${\mathrm{Fe}}_{2}{\mathrm{O}}_{4}$$ Fe 2 O 4 , Cu–Co$${\mathrm{Fe}}_{2}{\mathrm{O}}_{4}$$ Fe 2 O 4 , and Zn–Co$${\mathrm{Fe}}_{2}{\mathrm{O}}_{4}$$ Fe 2 O 4 nanoparticles was found to be 8, 15, and 14, respectively. While, the lattice constants were 8.4 nm, 8.39 nm, and 8.42 nm, respectively. The doping exhibits enhancement of the elastic properties. Cu–Co$${\mathrm{Fe}}_{2}{\mathrm{O}}_{4}$$ Fe 2 O 4 shows young’ modulus at 278.97 GPa, while the shear modulus was 185.98 GPa, as highest obtained values compared to virgin and other doping samples. The highest saturation magnetization was observed for virgin sample, Co$${\mathrm{Fe}}_{2}{\mathrm{O}}_{4}$$ Fe 2 O 4 , (56.1 emu/g) compared to it being 46.9 and 45 emu/g for Cu–Co$${\mathrm{Fe}}_{2}{\mathrm{O}}_{4}$$ Fe 2 O 4 and Zn–Co$${\mathrm{Fe}}_{2}{\mathrm{O}}_{4}$$ Fe 2 O 4 , respectively. The highest magnetic susceptibility (0.639) was obtained for Zn–Co$${\mathrm{Fe}}_{2}{\mathrm{O}}_{4}$$ Fe 2 O 4 . The thermal conductivity, thermal diffusivity, and specific heat of the prepared samples were investigated by the hot disk technique at room temperature. The results have shown an enhancement in the thermal properties of Co$${\mathrm{Fe}}_{2}{\mathrm{O}}_{4}$$ Fe 2 O 4 -doped Zn and Cu rather than virgin Co$${\mathrm{Fe}}_{2}{\mathrm{O}}_{4}$$ Fe 2 O 4 , predicting required thermal stability in the working devices. The Cu–Co$${\mathrm{Fe}}_{2}{\mathrm{O}}_{4}$$ Fe 2 O 4 sample exhibits the highest value of thermal conductivity (0.95 W/m k), thermal diffusivity (0.75 m $${\mathrm{m}}^{2}$$ m 2 /s), and specific heat (0.85 Mj/$${\mathrm{m}}^{3}$$ m 3 k) compared to (0.6 and 0.82 W/m k), (0.52 and 0.6 m $${\mathrm{m}}^{2}$$ m 2 /s), and (0.62 and 0.72 Mj/$${\mathrm{m}}^{3}$$ m 3 k) for Co$${\mathrm{Fe}}_{2}{\mathrm{O}}_{4}$$ Fe 2 O 4 and Zn–Co$${\mathrm{Fe}}_{2}{\mathrm{O}}_{4}$$ Fe 2 O 4 , respectively. The electrical conductivity and permittivity of all ferrite samples were enhanced by augmenting the temperature. The highest values were achieved for Co$${\mathrm{Fe}}_{2}{\mathrm{O}}_{4}$$ Fe 2 O 4 sample. The present Co$${\mathrm{Fe}}_{2}{\mathrm{O}}_{4}$$ Fe 2 O 4 -doped $${\mathrm{Cu}}^{2+}$$ Cu 2 + and $${\mathrm{Zn}}^{2+}$$ Zn 2 + ions offer a decent contender material with appealing characteristics suitable for different electronic applications.
Spinel ferrites for resistive random access memory applications
Cutting edge science and technology needs high quality data storage devices for their applications in artificial intelligence and digital industries. Resistive random access memory (RRAM) is an emerging nonvolatile memory used for recording and reproducing the digital information. Earlier studies on RRAM applications suggest that spinel ferrite is a potential material. We envisage that the spinel ferrite prepared by a particular route, namely spin coating, will in future optimize the essential parameters for optimal functioning of RRAM. An assertion to our assumptions, few researchers have already obtained important findings for spin coated spinel ferrites. Spin coated spinel ferrites, namely zinc ferrite, nickel ferrite, cobalt ferrite and mixed spinel ferrites, have been investigated for their applications as switching layers in RRAM devices. Particularly, spin coated cobalt ferrite, nickel ferrite and doped nickel ferrite were widely used as resistive switching layers. However, it is noticed that there is a tremendous scope for synthesis and resistive switching characterization of spin coated pure and doped zinc ferrite. Proper doping of special element into spinel ferrite can enhance the resistive switching performance of RRAM devices. Insertion of nano structures and metal layers within switching layer uplifts the performance of spin coated spinel ferrite-based RRAM devices. Active layer in RRAM device synthesized by spin coating technique exhibited good resistive switching properties, namely retention of $$10^{3}$$ 10 3 to $$10^{5}$$ 10 5 s, endurance in the range of $$10^{2}$$ 10 2 to 22,500 cycles and memory window of $$10^{2}$$ 10 2 to $$10^{6}$$ 10 6 . This review article accounts for the optimized parameters obtained especially for the spinel ferrite-based active material synthesized by spin coating justifying the results with appropriate theory. A good co-relation between synthesis parameters and the RRAM functional parameter is separately discussed at the end of review article.
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