Cu-doping Effects in CdSe<sub>x</sub>Te<sub>1-x</sub>/CdTe Solar Cells

Hsu, Chih-An; Palekis, Vasilios; Levcenko, S.; Morel, D.L.; Ferekides, C.S.

doi:10.1109/pvsc40753.2019.8980648

Cited by 5 publications

(1 citation statement)

References 12 publications

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“…The electron and hole lifetimes of CdSeTe are tied to the CdTe [19,20] as well as the doping concentration. To analyze the influence of the thickness and band gap grading of the p-CdSeTe layer, most of the parameters were kept the same between CdSeTe and CdTe.…”

Section: Device Architecture and Numerical Modelmentioning

confidence: 99%

Front interface defect signature and benefits of CdSeTe thickness and band gap in CdSeTe/CdTe graded solar cell

Filipe,

Chenene

2023

Preprint

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Thin film solar cells based on CdTe absorber suffer from abnormal current density – voltage (J-V) shapes and open‑circuit voltage deficit due to suboptimum device architecture, non-optimal back contact and bulk absorber limiting factors, such as low doping density, grain boundary and low carrier lifetime. In this study, we investigate the role of window/absorber interface defects properties in the J‑V curve shape and the combined effect of CdSexTe1-x thickness and band gap on the device performance using SCAPS-1D. For donor-type interface defects no abnormalities are reported in the J-V curve shape of the device. Acceptor-like defects show strong effect on the J-V shape and two types of anomalies in the J-V curve are reported, hysteresis and s-kink. Those abnormalities are eliminated when the defects concentration at the front interface is bellow or equal to. The simulations also point out the optimum CdSeTe thickness and band gap to achieve simultaneously high values of open-circuit voltage and short-circuit density, as well as, high conversion efficiency and fill factor. We demonstrate that further device structural optimization is required in MZO/CdSeTe/CdTe solar cell.

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Section: Device Architecture and Numerical Modelmentioning

confidence: 99%

Front interface defect signature and benefits of CdSeTe thickness and band gap in CdSeTe/CdTe graded solar cell

Filipe,

Chenene

2023

Preprint

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Effects of CdTe selenization on the electrical properties of the absorber for the fabrication of CdSexTe1-x/CdTe based solar cells

et al. 2021

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The Effect of $\text{CdSe}_{\mathrm{X}}\text{Te}_{1-\mathrm{X}}$ Thickness on the $\text{CdSe}_{\mathrm{X}}\text{Te}_{1-}$ x/CdTe Solar Cell Performance

Alom

Elahi

Palekis

et al. 2022

2022 IEEE 49th Photovoltaics Specialists Conference (PVSC)

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Cu-doping Effects in CdSe_xTe_1-x/CdTe Solar Cells

Cited by 5 publications

References 12 publications

Front interface defect signature and benefits of CdSeTe thickness and band gap in CdSeTe/CdTe graded solar cell

Front interface defect signature and benefits of CdSeTe thickness and band gap in CdSeTe/CdTe graded solar cell

Effects of CdTe selenization on the electrical properties of the absorber for the fabrication of CdSexTe1-x/CdTe based solar cells

The Effect of $\text{CdSe}_{\mathrm{X}}\text{Te}_{1-\mathrm{X}}$ Thickness on the $\text{CdSe}_{\mathrm{X}}\text{Te}_{1-}$ x/CdTe Solar Cell Performance

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Cu-doping Effects in CdSexTe1-x/CdTe Solar Cells

Cited by 5 publications

References 12 publications

Front interface defect signature and benefits of CdSeTe thickness and band gap in CdSeTe/CdTe graded solar cell

Front interface defect signature and benefits of CdSeTe thickness and band gap in CdSeTe/CdTe graded solar cell

Effects of CdTe selenization on the electrical properties of the absorber for the fabrication of CdSexTe1-x/CdTe based solar cells

The Effect of $\text{CdSe}_{\mathrm{X}}\text{Te}_{1-\mathrm{X}}$ Thickness on the $\text{CdSe}_{\mathrm{X}}\text{Te}_{1-}$ x/CdTe Solar Cell Performance

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Cu-doping Effects in CdSe_xTe_1-x/CdTe Solar Cells