Cu films prepared by bipolar pulsed high power impulse magnetron sputtering

Wu, Baohua; Haehnlein, Ian; Shchelkanov, Ivan; McLain, Jake; Patel, Dhruval; Uhlig, Jan; Jurczyk, Brian E.; Leng, Y.X.; Ruzic, D. N.

doi:10.1016/j.vacuum.2018.01.011

Cited by 95 publications

(86 citation statements)

References 22 publications

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“…5) by more than 15 % [2]. However, in work done at the Center for Plasma-Material Interactions (CPMI) at the University of Illinois in Urbana Champaign, the addition of the positive kick in the HIPMS process cycle was shown to increase rates (see Fig.…”

Section: Deposition Ratementioning

confidence: 98%

“…1). Work by Wu, et al suggests that the number of the highly energetic ions incident to the substrate is increased by more than 18 % [2]. This approach serves to eject or exclude trapped sputter target ions that may been recycled to the surface of the target, engaged in self sputtering so that, once rejected they can then contribute to the flux of adatoms heading to the surface of the substrate.…”

Section: Comparing Direct Current Magnetron Sputtering (Dcms) Pulsedmentioning

confidence: 99%

“…Wu et al [2] report an 18 % increase in the number of ions at the surface of the substrate when using the positive kick for deposition of copper on silicon. Ion velocities at 6 cm distance from the source are on the order of 2,500 meters/ second [3].…”

Section: Tunable Ion Energy Distribution and Argon To Metal Ion Ratiomentioning

confidence: 99%

“…In addition, HIPIMS also exhibits some degree of self-sputtering, where sputter target adatoms are ionized with some recycling of process gas and ionized target material to the surface of the target. More recently, HIPIMS power supplies have been re-engineered to provide both negative AND positive pulses to the target [2]. This advance has enabled new flexibility on the application of HIPIMS to a variety of thin film growth challenges.…”

Section: Introductionmentioning

confidence: 99%

“…with 50 V (100 µs) kick pulse HiPIMS with 150 V (100 µs) kick pulse HiPIMS with 50 V (500 µs) Deposition rate of copper using various power supplies and deposition reports[2].…”

mentioning

confidence: 99%

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Enhanced High Power Impulse Magnetron Sputter Processes

Gaines

2019

Vak Forsch Prax

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Summary High power impulse magnetron sputtering (HIPMS) has emerged as a useful approach for depositing highly dense and smooth coatings of electrically conductive materials. Recent advances in power supply technology have further enabled HIPMS through the addition of a positive kick in the pulse cycle which supplies a bias at the surface of the sputter target which expels sputter target ions and sends more charged adatoms toward the substrate. This has been demonstrated with critical materials like diamond‐like carbon and plasmonic materials. Material specific pulse magnitudes and durations can be developed to achieve new novel thin film morphologies.

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Section: Deposition Ratementioning

confidence: 98%

Section: Comparing Direct Current Magnetron Sputtering (Dcms) Pulsedmentioning

confidence: 99%

Section: Tunable Ion Energy Distribution and Argon To Metal Ion Ratiomentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

“…with 50 V (100 µs) kick pulse HiPIMS with 150 V (100 µs) kick pulse HiPIMS with 50 V (500 µs) Deposition rate of copper using various power supplies and deposition reports[2].…”

mentioning

confidence: 99%

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Enhanced High Power Impulse Magnetron Sputter Processes

Gaines

2019

Vak Forsch Prax

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Magnetron Sputtered Thin Films Based on Transition Metal Nitride: Structure and Properties

Bharani

Sharma

2022

Physica Status Solidi (a)

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Transition metal nitride (TMN) thin films exhibit outstanding physical, chemical, and mechanical properties, making them best suitable for a wide variety of applications. The most commonly used technique to produce metal nitride thin films with specific properties at optimum conditions is magnetron sputtering. Considering this, this review begins with advancements in the sputtering process from basic diode sputtering to the most commonly used pulsed magnetron sputtering. Further, the literature on several TMNs deposited via magnetron sputtering is summarized, referring to several articles that have been published during the last decades. The main emphasis lies on nitride-based thin films' structural, morphological, and mechanical aspects for various applications. In addition, the influence of reactive gas flow rate, substrate temperature, layer thickness, postannealing temperature, substrate bias voltage, protective layers, the sputtering technique adopted, etc. on the quality and performance of the thin films is also focused. The overall review work can be beneficial for the students and researchers in understanding the basic sputtering phenomenon with its advancements, the relationship between deposition parameters and surface properties, and to know the current research trend for exploring several research gaps in the literature.

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Enhanced High Power Impulse Magnetron Sputter Processes

Gaines

2023

Vak Forsch Prax

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Cu films prepared by bipolar pulsed high power impulse magnetron sputtering

Cited by 95 publications

References 22 publications

Enhanced High Power Impulse Magnetron Sputter Processes

Enhanced High Power Impulse Magnetron Sputter Processes

Magnetron Sputtered Thin Films Based on Transition Metal Nitride: Structure and Properties

Enhanced High Power Impulse Magnetron Sputter Processes

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