Cu-In fine-pitch-interconnects: influence of processing conditions on the interconnection quality

Bickel, Steffen; Sen, Shawon; Meyer, Jörg; Panchenko, Iuliana; Wolf, Marcus

doi:10.1109/estc.2018.8546413

Cited by 7 publications

(1 citation statement)

References 10 publications

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“…Over recent years, pure indium has been successfully employed as a low-temperature soldering material by Panchenko et al, and fine-pitch Cu–In bonding based on the SLID process was carried out at a peak temperature of 170 °C for 2 min [ 5 , 6 , 7 , 8 ]. In their research, the Cu/In joints revealed remarkable shear strengths, ranging from 45 to 120 MPa [ 7 ], which were comparable with the strengths of Cu/Sn interconnects [ 9 ].…”

Section: Introductionmentioning

confidence: 99%

Long-Term Aging Study on the Solid State Interfacial Reactions of In on Cu Substrate

Hung,

Chang,

Tsai

et al. 2023

Materials

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Indium is considered a candidate low-temperature solder because of its low melting temperature and excellent mechanical properties. However, the solid-state microstructure evolution of In with different substrates has rarely been studied due to the softness of In. To overcome this difficulty, cryogenic broad Ar+ beam ion polishing was used to produce an artifact-free Cu/In interface for observation. In this study, we accomplished phase identification and microstructure investigation at the Cu/In interface after long-term thermal aging. CuIn2 was observed to grow at the Cu/In interface and proved to be a stable phase in the Cu–In binary system. The peritectoid temperature of the Cu11In9 + In → CuIn2 reaction was confirmed to be between 100 and 120 °C. In addition, the growth rate of CuIn2 was discovered to be dominated by the curvature of the reactant Cu11In9/In phase and the temperature difference with the peritectoid temperature. Finally, a comprehensive microstructural evolution mechanism of the Cu/In solid-state interfacial reaction was proposed.

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