Cu(In,Ga)Se/sub 2/ based submodule process robustness

Keßler, J.; Wiedeman, S.; Russell, L.; Fogleboch, J.; Skibo, S.; Arya, R.R.; Carlson, David

doi:10.1109/pvsc.1996.564252

Cited by 7 publications

(3 citation statements)

References 2 publications

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“…However, as can be seen below, this was not found to be significant for device performance. Previous investigations have placed specific interconnect resistances in the range of 0:320:8 O cm for standard contacts and 0:120:2 O cm for laserformed contacts [9].…”

Section: Contact Resistancesmentioning

confidence: 99%

“…1a and b). Although the process is used where mechanical patterning is not an alternative, direct benefits have been reported such as reduced interconnect resistivity [9,10]. Other researchers have found that the resistivity of CIGS-based interconnects is higher than direct Mo-ZnO contacts [8].…”

Section: Introductionmentioning

confidence: 99%

“…Interconnect resistivity in a thin-film PV module can be evaluated by different structures [11][12][13]. Furthermore, the precision and dimension of the laser beam can aid in reducing the area loss due to interconnect zone width, thereby improving the efficiency of the modules [9,10]. If indeed a reduced interconnect width can be coupled with a lowered interconnect series resistance, this could mean a significant increase in module efficiency.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Laser patterning of P2 interconnect via in thin-film CIGS PV modules

Westin¹,

Zimmermann²,

Edoff³

2008

Solar Energy Materials and Solar Cells

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Section: Contact Resistancesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Laser patterning of P2 interconnect via in thin-film CIGS PV modules

Westin¹,

Zimmermann²,

Edoff³

2008

Solar Energy Materials and Solar Cells

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Cu(In,Ga)Se₂thin films grown with a Cu‐poor/rich/poor sequence: growth model and structural considerations

Keßler

Chityuttakan

Schöldström

et al. 2003

Progress in Photovoltaics

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Thin films of Cu(In,Ga)Se2 are grown by a co‐evaporation process in which the In, Ga, and Se fluxes, as well as the substrate temperature, are constant and the only variable is the Cu flux. This Cu flux varies in three steps in such a way that the growing film evolves from Cu‐poor to Cu‐rich and then back to Cu‐poor. The film growth is monitored by the ‘end point detection’ method, and film thicknesses of the order of 2 μm are deposited in less than 20 min. Quality devices (efficiencies above 15%) are produced in our baseline processes for all of the other synthesis steps. The Cu(In,Ga)Se2 layers are studied from a (112) versus (220) (204) orientation and recrystallization point of view. Including the results from a previous study on the influence of the substrate temperature to the present X‐ray diffraction and scanning as well as tunneling electron microscopy data, a five‐stage growth model for the films is described. The specific features of these films are that they are weakly (220) (204) oriented and exhibit crevices in their top fractions. The growth model hypothesizes about the origins of these crevices and on how to avoid them. Copyright © 2003 John Wiley & Sons, Ltd.

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ZnO layers deposited by the ion layer gas reaction on Cu(In,Ga)(S,Se)₂ thin film solar cell absorbers—impact of ‘damp‐heat’ conditions on the layer properties

Bär

Reichardt

Sieber

et al. 2006

Progress in Photovoltaics

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Cu(In,Ga)(S,Se)2 (‘CIGSSe’) based solar cells with a ZnO window extension layer (WEL) deposited by the ion layer gas reaction (ILGAR) reach competitive efficiencies compared to corresponding references with CdS buffer and lead to a simplified device structure. The WEL replaces not only the CdS buffer, but also the undoped part of the usually applied rf‐sputtered ZnO window bi‐layer. The long‐term stability of CIGSSe‐based solar modules is currently under investigation. In order to pass the respective stability tests, which include exposure to ‘damp‐heat’ (DH) conditions (85% relative humidity at 85(C) to accelerate possible aging effects, a good intrinsic material stability is required. In Reference1 it was revealed, that ILGAR‐ZnO contains a certain amount of meta‐stable hydroxide, which can be directly tuned by the ILGAR process parameters (number of process cycles and process temperature). In order to determine the ILGAR process parameters, which result in intrinsically stable WELs, ILGAR‐ZnO/CIGSSe test structures were investigated by means of scanning electron microscopy (SEM) and x‐ray photoelectron spectroscopy (XPS) before and after a DH‐test. It was found that, induced by the DH‐conditions, a continuous dehydration of the WELs together with a disintegration of the ILGAR‐ZnO layers takes place. This supports an earlier suggested mechanism of a DH‐induced degradation by a release of water at the most critical location in a solar cell, at the heterointerface between window and absorber. By a systematic variation of the ILGAR process parameters it was possible to reduce the hydroxide content in the ILGAR‐ZnO layers resulting in intrinsically more stable samples. Copyright © 2006 John Wiley & Sons, Ltd.

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Cu(In,Ga)Se/sub 2/ based submodule process robustness

Cited by 7 publications

References 2 publications

Laser patterning of P2 interconnect via in thin-film CIGS PV modules

Laser patterning of P2 interconnect via in thin-film CIGS PV modules

Cu(In,Ga)Se₂thin films grown with a Cu‐poor/rich/poor sequence: growth model and structural considerations

ZnO layers deposited by the ion layer gas reaction on Cu(In,Ga)(S,Se)₂ thin film solar cell absorbers—impact of ‘damp‐heat’ conditions on the layer properties

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Cu(In,Ga)Se/sub 2/ based submodule process robustness

Cited by 7 publications

References 2 publications

Laser patterning of P2 interconnect via in thin-film CIGS PV modules

Laser patterning of P2 interconnect via in thin-film CIGS PV modules

Cu(In,Ga)Se2thin films grown with a Cu‐poor/rich/poor sequence: growth model and structural considerations

ZnO layers deposited by the ion layer gas reaction on Cu(In,Ga)(S,Se)2 thin film solar cell absorbers—impact of ‘damp‐heat’ conditions on the layer properties

Contact Info

Product

Resources

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Cu(In,Ga)Se₂thin films grown with a Cu‐poor/rich/poor sequence: growth model and structural considerations

ZnO layers deposited by the ion layer gas reaction on Cu(In,Ga)(S,Se)₂ thin film solar cell absorbers—impact of ‘damp‐heat’ conditions on the layer properties