Cu-ion-selective membranes based on chalcogenide glasses

Tomova, R.; Spasov, G.; Stoycheva-Topalova, R.; Buroff, A.

doi:10.1016/j.snb.2004.04.059

Cited by 9 publications

(4 citation statements)

References 12 publications

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“…To explore the different aspects of such materials several investigators have been reported their work addresses the various properties; Garrido et al 57 have studied the ion selective application of Ag-Ge-Se chalcogenide glasses. Tomova et al 58 have reported the Cu-ion as selective membranes based on chalcogenide glasses. Vassilev et al have reported the Cd(II) and Zn(II) can be used as selective electrodes 59 60 with chalcogenide glasses.…”

Section: Background Of Metallic Chalcogenide Glassesmentioning

confidence: 99%

Recent Advances in Amorphous Semiconductors—A Correlative Study on Se-Based Metallic Chalcogenide Alloys

Singh¹

2012

Rev Adv Sci Engng

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Chalcogenide glasses or amorphous semiconductors are applicable materials in modern optoelectronics. Understanding of thermal, optical, electrical and structural properties in these materials is useful to demonstrate their potential uses. Particularly physical properties of metal containing chalcogenide glasses are getting much attention owing to their interesting features and wide range structural modification. This work presents a chronologic development in metal containing chalcogenide glasses and a correlation between optical, electrical, thermal parameters for recent developed Se-Zn-In alloys. Specifically, the variation of optical energy band gap (E g , electrical conductivity (av , crystallization activation energy (E c and Hruby number (GFA-glass forming ability parameter) with indium atomic percentage of Se 98−x Zn 2 In x (0 ≤ x ≤ 10) chalcogenide glasses is described. Subsequently, the variation of refractive index (n), E g , av , E c and Hruby number with average coordination number r of under examined systems is also discussed. Minimum and maximum variations in above physical parameters are obtained at threshold composition (6 at. wt% of In) and corresponding threshold structural unit r value.

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Section: Background Of Metallic Chalcogenide Glassesmentioning

confidence: 99%

Recent Advances in Amorphous Semiconductors—A Correlative Study on Se-Based Metallic Chalcogenide Alloys

Singh¹

2012

Rev Adv Sci Engng

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“…The chalcogenide glassy semiconductors differ from their crystalline counterparts by a much more flexible structure and by enormous variations of their properties, due to their disordered nature and almost unlimited ability for doping and alloying. That is why it is assumed that vitreous compositions on the basis of chalcogenide glasses in the form of membranes [7,8] or thin films [9][10][11][12][13][14][15][16][17] may function as chemical sensitive inorganic materials.…”

Section: Introductionmentioning

confidence: 99%

Complex (As2S3)(100−)(AgI) chalcogenide glasses for gas sensors

Kolev

Popov

Petkova

et al. 2009

Sensors and Actuators B: Chemical

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“…5 The use of chalcogenide glasses as membrane materials has gained an increasing importance because of their sensitivity, selectivity, chemical durability and their stability in acidic and corrosive media. [6][7][8][9][10] For these materials, the detection threshold can even reach a few concentrations in the ppm range. 2,[6][7][8][9][10] The use of copper sulfide as ion selective membrane for the conception of copper ions sensors has been already reported in the literature.…”

mentioning

confidence: 99%

“…[6][7][8][9][10] For these materials, the detection threshold can even reach a few concentrations in the ppm range. 2,[6][7][8][9][10] The use of copper sulfide as ion selective membrane for the conception of copper ions sensors has been already reported in the literature. [11][12][13][14] It has the advantage of being a nontoxic material.…”

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confidence: 99%

Monte Carlo Simulation of Ion-Exchange Response of Copper Sulfide Ion Selective Electrode for Metal Pollutant Detection

Boudouh

Guessasma

Essehli

et al. 2012

J. Electrochem. Soc.

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The present work aims at studying the potentiometric response of an ion-selective electrode. The target material is a copper sulfide (CuS) thin film designed for the detection of Cu+2 ions in solutions. The electrode is prepared by mean of an electrochemical deposition of copper sulfide on a silicon substrate. The Cu+2 response is then studied and a near Nernstian behavior of this electrode is observed in the range of pCu 6-1. In order to quantitatively explain the exchange process behind the Cu+2 response, a stochastic computational method is established to explain the potentiometric response of the copper sulfide sensors that can be used for water pollutant detection. The numerical scheme is based on Monte Carlo simulation of ion exchange between the solution and the CuS membrane surface. The probability of this Cu+2 -ion exchange is implemented as the main factor, which governs the variation of the electrode potential vs. the Cu+2 concentration in the solution. Three characteristics of the detection response are studied, namely the detection threshold, the slope and the saturation concentration. The model validation is achieved by predicting the Nernstian behavior for the studied CuS sensor and by comparing the obtained results with data from the literature dealing with Cu+2 detection

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Cu-ion-selective membranes based on chalcogenide glasses

Cited by 9 publications

References 12 publications

Recent Advances in Amorphous Semiconductors—A Correlative Study on Se-Based Metallic Chalcogenide Alloys

Recent Advances in Amorphous Semiconductors—A Correlative Study on Se-Based Metallic Chalcogenide Alloys

Complex (As2S3)(100−)(AgI) chalcogenide glasses for gas sensors

Monte Carlo Simulation of Ion-Exchange Response of Copper Sulfide Ion Selective Electrode for Metal Pollutant Detection

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