Cu metallization using a permanent magnet electron cyclotron resonance microwave plasma/sputtering hybrid system

Gorbatkin, S. M.

doi:10.1116/1.588566

Cited by 37 publications

(17 citation statements)

References 3 publications

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“…This was initially achieved by the application of a secondary discharge to a conventional magnetron sputtering discharge, 15 either an inductively coupled plasma source (ICP-MS) 12,[84][85][86] or a microwave amplified magnetron sputtering. [87][88][89][90] The secondary discharge typically creates plasma with electron density in the range of 10 17 -10 18 m À3 and with electron temperature in the range of 1.5-4.5 V, 91,92 which corresponds to electron impact ionization mean free path for the sputtered vapor of a few centimeters. 9,67 The ICP-MS discharge is currently widely used in the semiconductor industry for deposition of metal and compound lines, pads, vias, and contacts.…”

Section: B Modifications To the Magnetron Sputtering Dischargementioning

confidence: 99%

High power impulse magnetron sputtering discharge

Guðmundsson¹,

Brenning²,

Lundin³

et al. 2012

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

637

446

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The high power impulse magnetron sputtering (HiPIMS) discharge is a recent addition to plasma based sputtering technology. In HiPIMS, high power is applied to the magnetron target in unipolar pulses at low duty cycle and low repetition frequency while keeping the average power about 2 orders of magnitude lower than the peak power. This results in a high plasma density, and high ionization fraction of the sputtered vapor, which allows better control of the film growth by controlling the energy and direction of the deposition species. This is a significant advantage over conventional dc magnetron sputtering where the sputtered vapor consists mainly of neutral species. The HiPIMS discharge is now an established ionized physical vapor deposition technique, which is easily scalable and has been successfully introduced into various industrial applications. The authors give an overview of the development of the HiPIMS discharge, and the underlying mechanisms that dictate the discharge properties. First, an introduction to the magnetron sputtering discharge and its various configurations and modifications is given. Then the development and properties of the high power pulsed power supply are discussed, followed by an overview of the measured plasma parameters in the HiPIMS discharge, the electron energy and density, the ion energy, ion flux and plasma composition, and a discussion on the deposition rate. Finally, some of the models that have been developed to gain understanding of the discharge processes are reviewed, including the phenomenological material pathway model, and the ionization region model.

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Section: B Modifications To the Magnetron Sputtering Dischargementioning

confidence: 99%

High power impulse magnetron sputtering discharge

Guðmundsson¹,

Brenning²,

Lundin³

et al. 2012

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

637

446

View full text Add to dashboard Cite

show abstract

“…At low pressures (below 1 mtorr), the presence of charged particles is the most important characteristic employed in manufacturing. Examples are ion implantation out of plasmas (PSII) [1], [2] or sputtering [3], [4]. At higher pressures (1 mtorr-1 torr), plasma etching [5] and deposition take advantage of a combination of charged particle physics, plasma chemistry, and material science.…”

Section: Introductionmentioning

confidence: 99%

Role of plasma-aided manufacturing in semiconductor fabrication

Hershkowitz

1998

IEEE Trans. Plasma Sci.

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“…Some groups, detecting oxygen in the films, ascribe it to poor vacuum conditions before the deposition 2 or to background pressure of O 2 and H 2 O in the chamber. 5 The study considers significant sputtering of the plasma chamber and the aluminum liner inside this chamber under certain work conditions, detected by the dependence of different plasma parameters ͑floating potential and plasma density͒ with some deposition conditions. 4 A careful study about the problems caused by unwanted sputtering in ECR systems in plasma features has been published by Gorbatkin and Berry.…”

Section: Introductionmentioning

confidence: 99%

Analysis of the oxygen contamination present in SiNx films deposited by electron cyclotron resonance

García

Martin

Fernández

et al. 1995

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Articles you may be interested inEffect of unintentionally introduced oxygen on the electron-cyclotron resonance chemical-vapor deposition of SiN X films Role of oxygen in the electron cyclotron resonance plasmaassisted chemical vapor deposition of diamond films Silicon nitride ͑SiN x :H͒ films are deposited by the electron cyclotron resonance method at different microwave powers and nitrogen to silane gas flow ratio ͑R͒. Auger electron spectroscopy ͑AES͒, infrared ͑IR͒ absorption, and refractive index ͑n͒ measurements are used to determine deposition conditions resulting in oxygen contamination of the films as well as those conditions that result in good quality films without oxygen incorporation. Oxygen contamination of the films is produced at high microwave powers and R ratios as shown by the oxygen content determined by AES and different features in the IR spectra: the shift to higher frequencies for the positions of the Si-N and Si-H peaks, the presence of the N-H bending mode, and the broadening of the Si-N peak with its frequency. Low n values confirm the oxygen incorporation into the films, as they decrease when the oxygen content increases. The characteristic dependence of the oxygen presence in the films with the deposition conditions indicate that the oxygen source is the sputtering of the quartz liner located inside the plasma source.

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Cu metallization using a permanent magnet electron cyclotron resonance microwave plasma/sputtering hybrid system

Cited by 37 publications

References 3 publications

High power impulse magnetron sputtering discharge

High power impulse magnetron sputtering discharge

Role of plasma-aided manufacturing in semiconductor fabrication

Analysis of the oxygen contamination present in SiNx films deposited by electron cyclotron resonance

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