2008
DOI: 10.1016/j.electacta.2008.03.006
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Cu micropatterning on n-Si(111) by selective electrochemical deposition using an agarose stamp

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Cited by 15 publications
(12 citation statements)
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“…We electrodeposited a circular pattern of Cu with a diameter of 50 mm on ITO using an electrochemical wet stamping technique. 12 We observe HKUST-1 growth aer maintaining a potential of 1.5 V vs. SCE for 100 s. The inset of Fig. 2(f) shows that the octahedral crystal of HKUST-1 replaces the original Cu nanoparticles, as shown in the inset of Fig.…”
Section: Resultsmentioning
confidence: 71%
“…We electrodeposited a circular pattern of Cu with a diameter of 50 mm on ITO using an electrochemical wet stamping technique. 12 We observe HKUST-1 growth aer maintaining a potential of 1.5 V vs. SCE for 100 s. The inset of Fig. 2(f) shows that the octahedral crystal of HKUST-1 replaces the original Cu nanoparticles, as shown in the inset of Fig.…”
Section: Resultsmentioning
confidence: 71%
“…20 However, in the case of agarose-mediated electrodeposition, the agarose gel provides pathways for both electrons and Co 2+ ions. 21 The ions linearly and compulsorily migrate inside the gels because a linear electric eld is applied to the substrate, which plays a key role in the preferentially oriented growth. 10 Consequently, ions that are oriented in one direction (vertical to the substrate) will be reduced, leading to the nal formation of a vertically aligned Co(OH) 2 layer.…”
mentioning
confidence: 99%
“…Fig. 12.16 shows arrays of concentric copper rings on n-Si [30]. E-WETS can also be applied to fabricate microstructures of conductive polymers, metal oxides, as well as other materials which are difficult to fabricate using established methods.…”
Section: Figure 1213mentioning
confidence: 98%
“…The control of electrode separation distance is very critical in EnFACE. Concentric copper rings on n-Si fabricated by electrochemical wet stamping [30].…”
Section: Electrochemical Patterning By Enface Technology 233mentioning
confidence: 99%